component
AOD424G-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| aod424g-hxy-etched.glb | 6d ago |
| aod424g-hxy-etched.step | 6d ago |
| aod424g-hxy-hero.glb | 6d ago |
| aod424g-hxy-hero.overlay.json | 6d ago |
| aod424g-hxy.glb | 6d ago |
| aod424g-hxy.kicad_mod | 6d ago |
| aod424g-hxy.kicad_sym | 6d ago |
| aod424g-hxy.lbr | 6d ago |
| aod424g-hxy.step | 6d ago |
| package.json | 6d ago |
| page.json | 6d ago |
| README.md | 6d ago |
AOD424G-HXY
HXY MOSFET · MOSFETs · TO-252-2L
AOD424G-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the datasheet limits gate-source voltage to ±12V (VGS). |
| 2 | D | passive | Drain terminal of the N-channel MOSFET; rated for VDS 20V and 80A continuous drain current at TC=25℃. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no separate pin-level limit beyond the absolute maximum ratings listed for the device. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TC=25℃ | 1 | |
| Drain Current-Continuous | ID | 80 | A | TC=25℃ | 1 | ||
| Drain Current-Continuous | ID (100℃) | 42 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 210 | A | TC=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 70 | W | TC=25℃ | 1 | ||
| Single pulse avalanche energy | EAS | 200 | mJ | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.75 | 1 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 3.5 | 5 | mΩ | VGS=4.5V, ID=20 A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 5.5 | 7 | mΩ | VGS=2.5V, ID=15A | 2 | |
| Forward Transconductance | gFS | 15 | S | VDS=10V,ID=20A | 2 | ||
| Diode Forward Current | IS | 80 | A | 2 | |||
| Thermal Resistance, Junction-to-Case | RθJC | 2.1 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
AOD424G-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
aod424g-hxy-etched.step/aod424g-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod424g-hxy.step/aod424g-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
34e59adc4f903c63, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).