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AOD4189

UMW · MOSFETs · TO-252

AOD4189 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE of the -40 V P-channel MOSFET; the datasheet rates the gate-source voltage at VGS = ±20 V.
2 D passive DRAIN of the -40 V P-channel MOSFET, rated VDS = -40 V, with continuous drain current ID = -40 A at VGS = -10 V per the features list.
3 S passive SOURCE of the MOSFET; the datasheet gives no separate source-pin rating, and the VDS = -40 V and VGS = ±20 V limits are referenced to this terminal.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -40 V ID=-250µA, VGS=0V 3
Zero Gate Voltage Drain Current IDSS -1 µA VDS=-40V, VGS=0V 3
Zero Gate Voltage Drain Current (TJ=55°C) IDSS -5 µA VDS=-40V, VGS=0V, TJ=55°C 3
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(th) -1.7 -3 V VDS=VGS, ID=-250μA 3
On state drain current ID(ON) -50 A VGS=-10V, VDS=-5V 3
Static Drain-Source On-Resistance (VGS=-10V) RDS(ON) 18 22 mΩ VGS=-10V, ID=-12A 3
Static Drain-Source On-Resistance (VGS=-4.5V) RDS(ON) 23 29 mΩ VGS=-4.5V, ID=-8A 3
Diode Forward Voltage VSD -0.74 -1 V IS=-1A, VGS=0V 3
Maximum Body-Diode Continuous Current IS -20 A 3
Drain-Source Voltage VDS -40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -40 A TC=25°C 1
Continuous Drain Current ID -28 A TC=100°C 1
Pulsed Drain Current IDM -50 A 1
Avalanche Current IAR -35 A 1
Repetitive avalanche energy EAR 61 mJ L=0.1mH 1
Power Dissipation PD 62.5 W TC=25°C 1
Power Dissipation PD 31 W TC=100°C 1
Power Dissipation PDSM 2.5 W TA=25°C 1
Power Dissipation PDSM 1.6 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Maximum Junction-to-Ambient RθJA 15 20 °C/W t ≤ 10s 2
Maximum Junction-to-Ambient RθJA 41 50 °C/W Steady-State 2
Maximum Junction-to-Case RθJC 2 2.4 °C/W 2

CAD (KiCad official)

  • Symbol: AOD4189
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: aod4189-etched.step / aod4189-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod4189.step / aod4189.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (11 pp, sha256 7bc426b31c85099d, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF