component
AOD4186-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| aod4186-hxy-etched.glb | 13d ago |
| aod4186-hxy-etched.step | 13d ago |
| aod4186-hxy-hero.glb | 13d ago |
| aod4186-hxy-hero.overlay.json | 13d ago |
| aod4186-hxy.glb | 13d ago |
| aod4186-hxy.kicad_mod | 13d ago |
| aod4186-hxy.kicad_sym | 13d ago |
| aod4186-hxy.lbr | 13d ago |
| aod4186-hxy.step | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
AOD4186-HXY
HXY MOSFET · MOSFETs · TO-252-2L
AOD4186-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the datasheet rates gate-source voltage VGS at ±20 V and specifies VGS(th) of 1 V min, 1.5 V typ, 2.0 V max at VDS=VGS, ID=250μA. |
| 2 | D | passive | Drain terminal (also the thermal tab) with a drain-source voltage rating VDS of 40 V and continuous drain current ID of 50 A at TC=25℃. |
| 3 | S | passive | Source terminal; the body diode forward voltage VSD is 0.8 V typ and 1.2 V max at VGS=0 V, IS=9 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 11 | 16 | mΩ | VGS=10V, ID=8A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 18.9 | 24 | mΩ | VGS=4.5V, ID=4A | 2 | |
| Forward Transconductance | gFS | 33 | S | VDS=5V,ID=8A | 2 | ||
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS=0V,IS=9A | 2 | |
| Drain-Source Voltage | VDS | 40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 50 | A | VGS @ 10V, TC=25℃ | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 25 | A | VGS @ 10V, TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 80 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 19 | mJ | 1 | |||
| Avalanche Current | IAS | 30 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 20 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 55 | ℃/W | Steady state, footnote 1 | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 4.32 | ℃/W | Footnote 1 | 1 |
CAD (KiCad official)
- Symbol:
AOD4186-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
aod4186-hxy-etched.step/aod4186-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod4186-hxy.step/aod4186-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
437cfa99abec57f0, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).