component
AOD4185L
Public Made by Adomby adom
Alpha & Omega Semicon MOSFETs, TO-252-2(DPAK). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AOD4185L
Alpha & Omega Semicon · MOSFETs · TO-252-2(DPAK)
AOD4185L from Alpha & Omega Semicon, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±20V and VGS(th) is -1.7V typ (-1V to -3V range) at ID=-250µA. |
| 2 | D | passive | Drain, the center lead and exposed tab; VDS maximum is -40V and continuous ID is -40A at TC=25°C. |
| 3 | S | passive | Source; body-diode continuous current is -20A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | TO-252-2(DPAK) |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | ID=-250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-40V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | VDS=-40V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.7 | -1.9 | -3 | V | VDS=VGS, ID=-250µA | 2 |
| On state drain current | ID(ON) | -115 | A | VGS=-10V, VDS=-5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 12.5 | 15 | mΩ | VGS=-10V, ID=-20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 19 | 23 | mΩ | VGS=-10V, ID=-20A, TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 16 | 20 | mΩ | VGS=-4.5V, ID=-15A | 2 | |
| Maximum Body-Diode Continuous Current | IS | -20 | A | 2 | |||
| Diode Forward Voltage | VSD | -0.72 | -1 | V | IS=-1A, VGS=0V | 2 | |
| Gate resistance | Rg | 2.5 | 4 | 6 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg (-10V) | 42 | 55 | nC | VGS=-10V, VDS=-20V, ID=-20A | 2 | |
| Body Diode Reverse Recovery Time | trr | 38 | 49 | ns | IF=-20A, dI/dt=100A/µs | 2 | |
| Drain-Source Voltage | VDS | -40 | V | TC=25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -40 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | -31 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | -115 | A | 1 | |||
| Power Dissipation | PD | 62.5 | W | TC=25°C | 1 | ||
| Power Dissipation | PD | 31 | W | TC=100°C | 1 | ||
| Power Dissipation | PDSM | 2.5 | W | TA=25°C | 1 | ||
| Power Dissipation | PDSM | 1.6 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 15 | 20 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient | RθJA | 41 | 50 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Case | RθJC | 2 | 2.4 | °C/W | Steady-State | 1 | |
| Forward Transconductance | gFS | 50 | S | VDS=-5V, ID=-20A | 2 | ||
| Input Capacitance | Ciss | 2550 | pF | VGS=0V, VDS=-20V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 280 | pF | VGS=0V, VDS=-20V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 190 | pF | VGS=0V, VDS=-20V, f=1MHz | 2 | ||
| Total Gate Charge | Qg (-4.5V) | 18.6 | nC | 2 | |||
| Gate Source Charge | Qgs | 7 | nC | VGS=-10V, VDS=-20V, ID=-20A | 2 | ||
| Gate Drain Charge | Qgd | 8.6 | nC | VGS=-10V, VDS=-20V, ID=-20A | 2 | ||
| Turn-On Delay Time | tD(on) | 9.4 | ns | VGS=-10V, VDS=-20V, RL=1Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 20 | ns | VGS=-10V, VDS=-20V, RL=1Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 55 | ns | VGS=-10V, VDS=-20V, RL=1Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 30 | ns | VGS=-10V, VDS=-20V, RL=1Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 47 | nC | IF=-20A, dI/dt=100A/µs | 2 |
CAD (KiCad official)
- Symbol:
AOD4185L - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
- 3D model files:
aod4185l-etched.step/aod4185l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod4185l.step/aod4185l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha & Omega Semicon datasheet (6 pp, sha256
6d3402787c930b66, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AOD4185L
**Alpha & Omega Semicon** · MOSFETs · TO-252-2(DPAK)
AOD4185L from Alpha & Omega Semicon, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±20V and VGS(th) is -1.7V typ (-1V to -3V range) at ID=-250µA. |
| 2 | D | passive | Drain, the center lead and exposed tab; VDS maximum is -40V and continuous ID is -40A at TC=25°C. |
| 3 | S | passive | Source; body-diode continuous current is -20A maximum. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | TO-252-2(DPAK) |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -40 | | | V | ID=-250µA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS=-40V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -5 | µA | VDS=-40V, VGS=0V, TJ=55°C | 2 |
| Gate-Body leakage current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | -1.7 | -1.9 | -3 | V | VDS=VGS, ID=-250µA | 2 |
| On state drain current | ID(ON) | -115 | | | A | VGS=-10V, VDS=-5V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 12.5 | 15 | mΩ | VGS=-10V, ID=-20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 19 | 23 | mΩ | VGS=-10V, ID=-20A, TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 16 | 20 | mΩ | VGS=-4.5V, ID=-15A | 2 |
| Maximum Body-Diode Continuous Current | IS | | | -20 | A | | 2 |
| Diode Forward Voltage | VSD | | -0.72 | -1 | V | IS=-1A, VGS=0V | 2 |
| Gate resistance | Rg | 2.5 | 4 | 6 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg (-10V) | | 42 | 55 | nC | VGS=-10V, VDS=-20V, ID=-20A | 2 |
| Body Diode Reverse Recovery Time | trr | | 38 | 49 | ns | IF=-20A, dI/dt=100A/µs | 2 |
| Drain-Source Voltage | VDS | | | -40 | V | TC=25°C | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | -40 | A | TC=25°C | 1 |
| Continuous Drain Current | ID | | | -31 | A | TC=100°C | 1 |
| Pulsed Drain Current | IDM | | | -115 | A | | 1 |
| Power Dissipation | PD | | | 62.5 | W | TC=25°C | 1 |
| Power Dissipation | PD | | | 31 | W | TC=100°C | 1 |
| Power Dissipation | PDSM | | | 2.5 | W | TA=25°C | 1 |
| Power Dissipation | PDSM | | | 1.6 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 1 |
| Maximum Junction-to-Ambient | RθJA | | 15 | 20 | °C/W | t ≤ 10s | 1 |
| Maximum Junction-to-Ambient | RθJA | | 41 | 50 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Case | RθJC | | 2 | 2.4 | °C/W | Steady-State | 1 |
| Forward Transconductance | gFS | | 50 | | S | VDS=-5V, ID=-20A | 2 |
| Input Capacitance | Ciss | | 2550 | | pF | VGS=0V, VDS=-20V, f=1MHz | 2 |
| Output Capacitance | Coss | | 280 | | pF | VGS=0V, VDS=-20V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 190 | | pF | VGS=0V, VDS=-20V, f=1MHz | 2 |
| Total Gate Charge | Qg (-4.5V) | | 18.6 | | nC | | 2 |
| Gate Source Charge | Qgs | | 7 | | nC | VGS=-10V, VDS=-20V, ID=-20A | 2 |
| Gate Drain Charge | Qgd | | 8.6 | | nC | VGS=-10V, VDS=-20V, ID=-20A | 2 |
| Turn-On Delay Time | tD(on) | | 9.4 | | ns | VGS=-10V, VDS=-20V, RL=1Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr | | 20 | | ns | VGS=-10V, VDS=-20V, RL=1Ω, RGEN=3Ω | 2 |
| Turn-Off Delay Time | tD(off) | | 55 | | ns | VGS=-10V, VDS=-20V, RL=1Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf | | 30 | | ns | VGS=-10V, VDS=-20V, RL=1Ω, RGEN=3Ω | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 47 | | nC | IF=-20A, dI/dt=100A/µs | 2 |
## CAD (KiCad official)
- Symbol: `AOD4185L`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
- 3D model files: `aod4185l-etched.step` / `aod4185l-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aod4185l.step` / `aod4185l.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Alpha & Omega Semicon datasheet](docs/aod4185l-datasheet.pdf) (6 pp, sha256 `6d3402787c930b66`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/aod4185l-datasheet.pdf)