component
AOD4185-JSM
Public Made by Adomby adom
JSMSEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AOD4185-JSM
JSMSEMI · MOSFETs · TO-252
AOD4185-JSM from JSMSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with VGSS rated ±20V and a gate threshold of -1.4V to -2.4V at IDS=-250μA. |
| 2 | D | passive | Drain, connected to the exposed tab, with VDSS rated -40V and continuous drain current of -44A at TC=25°C. |
| 3 | S | passive | Source of the P-channel MOSFET, with diode continuous forward current rated -40A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -40 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (TA=25°C) | ID | -15 | A | VGS=-10V, TA=25°C | 1 | ||
| Continuous Drain Current (TA=70°C) | ID | -12 | A | VGS=-10V, TA=70°C | 1 | ||
| Pulsed Drain Current (300μs, tested) | IDP | -62 | A | 300μs pulsed drain current tested | 1 | ||
| Continuous Drain Current (TC=25°C) | ID | -44 | A | VGS=-10V, TC=25°C | 1 | ||
| Continuous Drain Current (TC=100°C) | ID | -28 | A | VGS=-10V, TC=100°C | 1 | ||
| Pulsed Drain Current (300μs, tested, TC=25°C) | IDP | -176 | A | 300μs pulsed drain current tested, TC=25°C | 1 | ||
| Diode Continuous Forward Current | IS | -40 | A | 1 | |||
| Avalanche Current, Single Pulse (L=0.1mH) | IAS | -30 | A | L=0.1mH | 1 | ||
| Avalanche Current, Single Pulse (L=1mH) | IAS | -13 | A | L=1mH | 1 | ||
| Avalanche Energy, Single Pulse (L=0.1mH) | EAS | 45 | mJ | L=0.1mH | 1 | ||
| Avalanche Energy, Single Pulse (L=1mH) | EAS | 84 | mJ | L=1mH | 1 | ||
| Maximum Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Maximum Power Dissipation (TA=25°C) | PD | 6.3 | W | TA=25°C | 1 | ||
| Maximum Power Dissipation (TA=70°C) | PD | 4 | W | TA=70°C | 1 | ||
| Maximum Power Dissipation (TC=25°C) | PD | 50 | W | TC=25°C | 1 | ||
| Maximum Power Dissipation (TC=100°C) | PD | 20 | W | TC=100°C | 1 | ||
| Thermal Resistance Junction to Ambient (t≤10s) | RθJA | 20 | °C/W | t ≤ 10s | 1 | ||
| Thermal Resistance Junction to Ambient (steady state) | RθJA | 50 | °C/W | Steady State | 1 | ||
| Thermal Resistance Junction to Case | RθJC | 2.5 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V, IDS=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-32V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -30 | μA | TJ=85°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1.4 | -1.9 | -2.4 | V | VDS=VGS, IDS=-250μA | 2 |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±25V, VDS=0V | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 11 | 15 | mΩ | VGS=-10V, IDS=-15A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 14 | 22 | mΩ | VGS=-4.5V, IDS=-10A | 2 | |
| Diode Forward Voltage | VSD | -0.75 | -1 | V | ISD=-1A, VGS=0V | 2 | |
| Gate Resistance | RG | 2.3 | 5 | Ω | VGS=0V, VDS=0V, F=1MHz | 2 | |
| Input Capacitance | Ciss | 1500 | 1950 | pF | VGS=0V, VDS=-20V, Frequency=1.0MHz | 2 | |
| Turn-on Delay Time | td(ON) | 14 | 25 | ns | VDD=-20V, RL=20Ω, IDS=-1A, VGEN=-10V, RG=6Ω | 2 | |
| Turn-on Rise Time | tr | 12 | 22 | ns | VDD=-20V, RL=20Ω, IDS=-1A, VGEN=-10V, RG=6Ω | 2 | |
| Turn-off Delay Time | td(OFF) | 41 | 74 | ns | VDD=-20V, RL=20Ω, IDS=-1A, VGEN=-10V, RG=6Ω | 2 | |
| Turn-off Fall Time | tf | 22 | 40 | ns | VDD=-20V, RL=20Ω, IDS=-1A, VGEN=-10V, RG=6Ω | 2 | |
| Total Gate Charge | Qg | 32 | 45 | nC | VDS=-20V, VGS=-10V, IDS=-15A | 2 |
CAD (KiCad official)
- Symbol:
AOD4185-JSM - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
aod4185-jsm-etched.step/aod4185-jsm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod4185-jsm.step/aod4185-jsm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (7 pp, sha256
aca8e6fbbe7c2f83, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AOD4185-JSM
**JSMSEMI** · MOSFETs · TO-252
AOD4185-JSM from JSMSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with VGSS rated ±20V and a gate threshold of -1.4V to -2.4V at IDS=-250μA. |
| 2 | D | passive | Drain, connected to the exposed tab, with VDSS rated -40V and continuous drain current of -44A at TC=25°C. |
| 3 | S | passive | Source of the P-channel MOSFET, with diode continuous forward current rated -40A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -40 | | | V | | 1 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 1 |
| Continuous Drain Current (TA=25°C) | ID | -15 | | | A | VGS=-10V, TA=25°C | 1 |
| Continuous Drain Current (TA=70°C) | ID | -12 | | | A | VGS=-10V, TA=70°C | 1 |
| Pulsed Drain Current (300μs, tested) | IDP | -62 | | | A | 300μs pulsed drain current tested | 1 |
| Continuous Drain Current (TC=25°C) | ID | -44 | | | A | VGS=-10V, TC=25°C | 1 |
| Continuous Drain Current (TC=100°C) | ID | -28 | | | A | VGS=-10V, TC=100°C | 1 |
| Pulsed Drain Current (300μs, tested, TC=25°C) | IDP | -176 | | | A | 300μs pulsed drain current tested, TC=25°C | 1 |
| Diode Continuous Forward Current | IS | -40 | | | A | | 1 |
| Avalanche Current, Single Pulse (L=0.1mH) | IAS | -30 | | | A | L=0.1mH | 1 |
| Avalanche Current, Single Pulse (L=1mH) | IAS | -13 | | | A | L=1mH | 1 |
| Avalanche Energy, Single Pulse (L=0.1mH) | EAS | | | 45 | mJ | L=0.1mH | 1 |
| Avalanche Energy, Single Pulse (L=1mH) | EAS | | | 84 | mJ | L=1mH | 1 |
| Maximum Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Maximum Power Dissipation (TA=25°C) | PD | | | 6.3 | W | TA=25°C | 1 |
| Maximum Power Dissipation (TA=70°C) | PD | | | 4 | W | TA=70°C | 1 |
| Maximum Power Dissipation (TC=25°C) | PD | | | 50 | W | TC=25°C | 1 |
| Maximum Power Dissipation (TC=100°C) | PD | | | 20 | W | TC=100°C | 1 |
| Thermal Resistance Junction to Ambient (t≤10s) | RθJA | | | 20 | °C/W | t ≤ 10s | 1 |
| Thermal Resistance Junction to Ambient (steady state) | RθJA | | | 50 | °C/W | Steady State | 1 |
| Thermal Resistance Junction to Case | RθJC | | | 2.5 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -40 | | | V | VGS=0V, IDS=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-32V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -30 | μA | TJ=85°C | 2 |
| Gate Threshold Voltage | VGS(th) | -1.4 | -1.9 | -2.4 | V | VDS=VGS, IDS=-250μA | 2 |
| Gate Leakage Current | IGSS | -100 | | 100 | nA | VGS=±25V, VDS=0V | 2 |
| Drain-Source On-state Resistance | RDS(ON) | | 11 | 15 | mΩ | VGS=-10V, IDS=-15A | 2 |
| Drain-Source On-state Resistance | RDS(ON) | | 14 | 22 | mΩ | VGS=-4.5V, IDS=-10A | 2 |
| Diode Forward Voltage | VSD | | -0.75 | -1 | V | ISD=-1A, VGS=0V | 2 |
| Gate Resistance | RG | | 2.3 | 5 | Ω | VGS=0V, VDS=0V, F=1MHz | 2 |
| Input Capacitance | Ciss | | 1500 | 1950 | pF | VGS=0V, VDS=-20V, Frequency=1.0MHz | 2 |
| Turn-on Delay Time | td(ON) | | 14 | 25 | ns | VDD=-20V, RL=20Ω, IDS=-1A, VGEN=-10V, RG=6Ω | 2 |
| Turn-on Rise Time | tr | | 12 | 22 | ns | VDD=-20V, RL=20Ω, IDS=-1A, VGEN=-10V, RG=6Ω | 2 |
| Turn-off Delay Time | td(OFF) | | 41 | 74 | ns | VDD=-20V, RL=20Ω, IDS=-1A, VGEN=-10V, RG=6Ω | 2 |
| Turn-off Fall Time | tf | | 22 | 40 | ns | VDD=-20V, RL=20Ω, IDS=-1A, VGEN=-10V, RG=6Ω | 2 |
| Total Gate Charge | Qg | | 32 | 45 | nC | VDS=-20V, VGS=-10V, IDS=-15A | 2 |
## CAD (KiCad official)
- Symbol: `AOD4185-JSM`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `aod4185-jsm-etched.step` / `aod4185-jsm-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aod4185-jsm.step` / `aod4185-jsm.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [JSMSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603079897418256384) (7 pp, sha256 `aca8e6fbbe7c2f83`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/aod4185-jsm-datasheet.pdf)