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AOD4184L

Alpha Omega Semicon · MOSFETs · TO-252-2(DPAK)

AOD4184L from Alpha Omega Semicon, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; gate-source voltage is rated at ±20 V (VGS).
2 D passive Drain, electrically connected to the DPAK tab; continuous drain current is rated 50 A at TC=25°C (limited by bond wires) and VDS is 40 V.
3 S passive Source of the MOSFET; body-diode maximum continuous current is rated 20 A (IS).

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package TO-252-2(DPAK)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 50 A TC=25°C 1
Continuous Drain Current ID 40 A TC=100°C 1
Pulsed Drain Current IDM 120 A 1
Avalanche Current IAR 35 A 1
Repetitive avalanche energy EAR 61 mJ L=0.1mH 1
Power Dissipation PD 50 W TC=25°C 1
Power Dissipation PD 25 W TC=100°C 1
Power Dissipation PDSM 2.3 W TA=25°C 1
Power Dissipation PDSM 1.45 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Maximum Junction-to-Ambient (t ≤ 10s) RθJA 18 22 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient (Steady-State) RθJA 44 55 °C/W Steady-State 1
Maximum Junction-to-Case RθJC 2.4 3 °C/W 1
Drain-Source Breakdown Voltage BVDSS 40 V ID=250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=40V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 µA TJ=55°C, VDS=40V, VGS=0V 2
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1.7 2.2 3 V VDS=VGS, ID=250µA 2
On state drain current ID(ON) 120 A VGS=10V, VDS=5V 2
Static Drain-Source On-Resistance RDS(ON) 6.7 8 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 11 13 mΩ TJ=125°C, VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 8.5 11 mΩ VGS=4.5V, ID=15A 2
Diode Forward Voltage VSD 0.72 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 20 A 2
Gate resistance Rg 2 3.5 5 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge Qg (10V) 27.2 35.4 nC VGS=10V, VDS=20V, ID=20A 2
Body Diode Reverse Recovery Time trr 29 38 ns IF=20A, dI/dt=100A/µs 2

CAD (KiCad official)

  • Symbol: AOD4184L
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
  • 3D model files: aod4184l-etched.step / aod4184l-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod4184l.step / aod4184l.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (5 pp, sha256 bde7d5e4be849eb3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF