component
AOD417
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UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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aod417: specified limits as data (metadata.characteristics, 13 rows from the datasheet)
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AOD417
UMW · MOSFETs · TO-252
AOD417 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE pin of the -30V P-channel MOSFET, used to control the device (pinning table, page 1). |
| 2 | D | passive | DRAIN pin of the -30V P-channel MOSFET, rated VDS = -30V with continuous drain current ID = -25A at VGS = -10V (pinning table on page 1; ratings from page 1). |
| 3 | S | passive | SOURCE pin of the -30V P-channel MOSFET (pinning table, page 1). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | ID=-250µA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-24V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (TJ=55°C) | IDSS | -5 | µA | VDS=-24V, VGS=0V; TJ=55°C | 3 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.9 | -3 | V | VDS=VGS, ID=-250μA | 3 |
| On state drain current | ID(ON) | -60 | A | VGS=-10V, VDS=-5V | 3 | ||
| Diode Forward Voltage | VSD | -0.75 | -1 | V | IS=-1A, VGS=0V | 3 | |
| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA | 16.7 | 25 | °C/W | t ≤ 10s | 2 | |
| Maximum Junction-to-Ambient (Steady-State) | RθJA | 40 | 50 | °C/W | Steady-State | 2 | |
| Maximum Junction-to-Case | RθJC | 2.5 | 3 | °C/W | 2 | ||
| Drain-Source Voltage | VDS | -30 | V | TA=25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25°C | 1 | |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 |
CAD (KiCad official)
- Symbol:
AOD417 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
aod417-etched.step/aod417-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod417.step/aod417.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
86a572d0c27fba23, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AOD417
**UMW** · MOSFETs · TO-252
AOD417 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE pin of the -30V P-channel MOSFET, used to control the device (pinning table, page 1). |
| 2 | D | passive | DRAIN pin of the -30V P-channel MOSFET, rated VDS = -30V with continuous drain current ID = -25A at VGS = -10V (pinning table on page 1; ratings from page 1). |
| 3 | S | passive | SOURCE pin of the -30V P-channel MOSFET (pinning table, page 1). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | ID=-250µA, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS=-24V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current (TJ=55°C) | IDSS | | | -5 | µA | VDS=-24V, VGS=0V; TJ=55°C | 3 |
| Gate-Body leakage current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 3 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.9 | -3 | V | VDS=VGS, ID=-250μA | 3 |
| On state drain current | ID(ON) | -60 | | | A | VGS=-10V, VDS=-5V | 3 |
| Diode Forward Voltage | VSD | | -0.75 | -1 | V | IS=-1A, VGS=0V | 3 |
| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA | | 16.7 | 25 | °C/W | t ≤ 10s | 2 |
| Maximum Junction-to-Ambient (Steady-State) | RθJA | | 40 | 50 | °C/W | Steady-State | 2 |
| Maximum Junction-to-Case | RθJC | | 2.5 | 3 | °C/W | | 2 |
| Drain-Source Voltage | VDS | -30 | | | V | TA=25°C | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TA=25°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `AOD417`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `aod417-etched.step` / `aod417-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aod417.step` / `aod417.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755873944241225728) (10 pp, sha256 `86a572d0c27fba23`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/aod417-datasheet.pdf)