component
AOD4144-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AOD4144-MS
MSKSEMI · MOSFETs · TO-252
AOD4144-MS from MSKSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the gate-source voltage is rated at ±20 V (VGS). |
| 2 | D | passive | Drain terminal; the drain-source voltage is rated at 30 V (VDS) with 60 A continuous drain current at TC=25℃. |
| 3 | S | passive | Source terminal; the continuous source current is rated at 55 A (IS) and the pulsed source current at 110 A (ISM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current, VGS @ 10V | ID@TC=25℃ | 60 | A | 2 | |||
| Continuous Drain Current, VGS @ 10V | ID@TC=100℃ | 40 | A | 2 | |||
| Continuous Drain Current, VGS @ 10V | ID@TA=25℃ | 13.6 | A | 2 | |||
| Continuous Drain Current, VGS @ 10V | ID@TA=70℃ | 11.4 | A | 2 | |||
| Pulsed Drain Current | IDM | 110 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 57.8 | mJ | 2 | |||
| Avalanche Current | IAS | 34 | A | 2 | |||
| Total Power Dissipation | PD@TC=25℃ | 41 | W | 2 | |||
| Total Power Dissipation | PD@TA=25℃ | 2.42 | W | 2 | |||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 2 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 62 | ℃/W | Steady State | 2 | ||
| Thermal Resistance Junction-Case | RθJC | 3.6 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V , ID=250uA | 3 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 7.5 | 8.5 | mΩ | VGS=10V , ID=30A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 11 | 14 | mΩ | VGS=4.5V , ID=15A | 3 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.5 | 2.5 | V | VGS=VDS , ID=250uA | 3 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V , VGS=0V , TJ=25℃ | 3 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V , VGS=0V , TJ=55℃ | 3 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 3 | |
| Total Gate Charge (4.5V) | Qg | 12.6 | 17.6 | nC | VDS=15V , VGS=4.5V , ID=15A | 3 | |
| Gate-Source Charge | Qgs | 4.2 | 5.9 | nC | VDS=15V , VGS=4.5V , ID=15A | 3 | |
| Gate-Drain Charge | Qgd | 5.1 | 7.1 | nC | VDS=15V , VGS=4.5V , ID=15A | 3 | |
| Turn-On Delay Time | Td(on) | 4.6 | 9.2 | ns | VDD=15V , VGS=10V , RG=3.3 ID=15A | 3 | |
| Rise Time | Tr | 12.2 | 22 | ns | VDD=15V , VGS=10V , RG=3.3 ID=15A | 3 | |
| Turn-Off Delay Time | Td(off) | 26.6 | 53 | ns | VDD=15V , VGS=10V , RG=3.3 ID=15A | 3 | |
| Fall Time | Tf | 8 | 16 | ns | VDD=15V , VGS=10V , RG=3.3 ID=15A | 3 | |
| Input Capacitance | Ciss | 1317 | 1843 | pF | VDS=15V , VGS=0V , f=1MHz | 3 | |
| Output Capacitance | Coss | 163 | 228 | pF | VDS=15V , VGS=0V , f=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 131 | 183 | pF | VDS=15V , VGS=0V , f=1MHz | 3 | |
| Continuous Source Current | IS | 55 | A | VG=VD=0V , Force Current | 3 | ||
| Pulsed Source Current | ISM | 110 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 3 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.027 | V/℃ | Reference to 25℃ , ID=1mA | 3 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | -5.8 | mV/℃ | 3 | |||
| Forward Transconductance | gfs | 38 | S | VDS=5V , ID=30A | 3 | ||
| Gate Resistance | Rg | 2.2 | 3.5 | VDS=0V , VGS=0V , f=1MHz | 3 | ||
| Reverse Recovery Time | trr | 9.2 | nS | IF=30A , dI/dt=100A/µs , TJ=25℃ | 3 | ||
| Reverse Recovery Charge | Qrr | 2 | nC | IF=30A , dI/dt=100A/µs , TJ=25℃ | 3 |
CAD (KiCad official)
- Symbol:
AOD4144-MS - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
aod4144-ms-etched.step/aod4144-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod4144-ms.step/aod4144-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (7 pp, sha256
05afa2d2a7484ca1, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AOD4144-MS
**MSKSEMI** · MOSFETs · TO-252
AOD4144-MS from MSKSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the gate-source voltage is rated at ±20 V (VGS). |
| 2 | D | passive | Drain terminal; the drain-source voltage is rated at 30 V (VDS) with 60 A continuous drain current at TC=25℃. |
| 3 | S | passive | Source terminal; the continuous source current is rated at 55 A (IS) and the pulsed source current at 110 A (ISM). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 2 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 2 |
| Continuous Drain Current, VGS @ 10V | ID@TC=25℃ | | | 60 | A | | 2 |
| Continuous Drain Current, VGS @ 10V | ID@TC=100℃ | | | 40 | A | | 2 |
| Continuous Drain Current, VGS @ 10V | ID@TA=25℃ | | | 13.6 | A | | 2 |
| Continuous Drain Current, VGS @ 10V | ID@TA=70℃ | | | 11.4 | A | | 2 |
| Pulsed Drain Current | IDM | | | 110 | A | | 2 |
| Single Pulse Avalanche Energy | EAS | | | 57.8 | mJ | | 2 |
| Avalanche Current | IAS | | | 34 | A | | 2 |
| Total Power Dissipation | PD@TC=25℃ | | | 41 | W | | 2 |
| Total Power Dissipation | PD@TA=25℃ | | | 2.42 | W | | 2 |
| Storage Temperature Range | TSTG | -55 | | 175 | ℃ | | 2 |
| Operating Junction Temperature Range | TJ | -55 | | 175 | ℃ | | 2 |
| Thermal Resistance Junction-ambient (Steady State) | RθJA | | | 62 | ℃/W | Steady State | 2 |
| Thermal Resistance Junction-Case | RθJC | | | 3.6 | ℃/W | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V , ID=250uA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 7.5 | 8.5 | mΩ | VGS=10V , ID=30A | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 11 | 14 | mΩ | VGS=4.5V , ID=15A | 3 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.5 | 2.5 | V | VGS=VDS , ID=250uA | 3 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=24V , VGS=0V , TJ=25℃ | 3 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=24V , VGS=0V , TJ=55℃ | 3 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V , VDS=0V | 3 |
| Total Gate Charge (4.5V) | Qg | | 12.6 | 17.6 | nC | VDS=15V , VGS=4.5V , ID=15A | 3 |
| Gate-Source Charge | Qgs | | 4.2 | 5.9 | nC | VDS=15V , VGS=4.5V , ID=15A | 3 |
| Gate-Drain Charge | Qgd | | 5.1 | 7.1 | nC | VDS=15V , VGS=4.5V , ID=15A | 3 |
| Turn-On Delay Time | Td(on) | | 4.6 | 9.2 | ns | VDD=15V , VGS=10V , RG=3.3 ID=15A | 3 |
| Rise Time | Tr | | 12.2 | 22 | ns | VDD=15V , VGS=10V , RG=3.3 ID=15A | 3 |
| Turn-Off Delay Time | Td(off) | | 26.6 | 53 | ns | VDD=15V , VGS=10V , RG=3.3 ID=15A | 3 |
| Fall Time | Tf | | 8 | 16 | ns | VDD=15V , VGS=10V , RG=3.3 ID=15A | 3 |
| Input Capacitance | Ciss | | 1317 | 1843 | pF | VDS=15V , VGS=0V , f=1MHz | 3 |
| Output Capacitance | Coss | | 163 | 228 | pF | VDS=15V , VGS=0V , f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 131 | 183 | pF | VDS=15V , VGS=0V , f=1MHz | 3 |
| Continuous Source Current | IS | | | 55 | A | VG=VD=0V , Force Current | 3 |
| Pulsed Source Current | ISM | | | 110 | A | | 3 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 3 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ | | 0.027 | | V/℃ | Reference to 25℃ , ID=1mA | 3 |
| VGS(th) Temperature Coefficient | △VGS(th) | | -5.8 | | mV/℃ | | 3 |
| Forward Transconductance | gfs | | 38 | | S | VDS=5V , ID=30A | 3 |
| Gate Resistance | Rg | | 2.2 | 3.5 | | VDS=0V , VGS=0V , f=1MHz | 3 |
| Reverse Recovery Time | trr | | 9.2 | | nS | IF=30A , dI/dt=100A/µs , TJ=25℃ | 3 |
| Reverse Recovery Charge | Qrr | | 2 | | nC | IF=30A , dI/dt=100A/µs , TJ=25℃ | 3 |
## CAD (KiCad official)
- Symbol: `AOD4144-MS`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `aod4144-ms-etched.step` / `aod4144-ms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aod4144-ms.step` / `aod4144-ms.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8555434930560987136) (7 pp, sha256 `05afa2d2a7484ca1`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/aod4144-ms-datasheet.pdf)