component

AOD4130-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsaod4130-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers aod4130-vb: viewers · Ray 17d ago
aod4130-vb-etched.glb Publish 0.1.0 · Ray 17d ago
aod4130-vb-etched.step aod4130-vb: factory component page (tier=lcsc) · Ray 17d ago
aod4130-vb-hero.glb aod4130-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
aod4130-vb-hero.overlay.json Publish 0.1.0 · Ray 17d ago
aod4130-vb.glb Publish 0.1.0 · Ray 17d ago
aod4130-vb.kicad_mod Publish 0.1.0 · Ray 17d ago
aod4130-vb.kicad_sym Publish 0.1.0 · Ray 17d ago
aod4130-vb.lbr Publish 0.1.0 · Ray 17d ago
aod4130-vb.step Publish 0.1.0 · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago

AOD4130-VB

VBsemi Elec · MOSFETs · TO-252

AOD4130-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; gate-source voltage is rated at ±20 V (VGS absolute maximum).
2 D passive Drain, connected to the tab; continuous drain current is rated at 100 A at TC = 25 °C is not stated, with ID listed as 60 V drain-source rated device at 25 °C case temperature and maximum power dissipation of 100 W at TC = 25 °C.
3 S passive Source of the N-channel MOSFET; continuous source (diode conduction) current is rated at 23 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -20 20 V 1
Pulsed Drain Current IDM 100 A 1
Continuous Source Current (Diode Conduction) IS 23 A 1
Avalanche Current IAS 20 A 1
Single Avalanche Energy EAS 20 mJ L = 0.1 mH, duty cycle ≤ 1 % 1
Maximum Power Dissipation PD 100 W TC = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Maximum Junction-to-Ambient (t ≤ 10 sec) RthJA 18 22 °C/W t ≤ 10 sec 1
Maximum Junction-to-Ambient (Steady State) RthJA 40 50 °C/W Steady State 1
Maximum Junction-to-Case RthJC 3.2 4 °C/W 1
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0 V, ID = 250 µA 2
Gate Threshold Voltage VGS(th) 1 2 3 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (TJ = 125 °C) IDSS 50 µA VDS = 60 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current (TJ = 175 °C) IDSS 250 µA VDS = 60 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 50 A VDS = 5 V, VGS = 10 V 2
Drain-Source On-State Resistance rDS(on) 0.025 Ω VGS = 10 V, ID = 15 A 2
Drain-Source On-State Resistance (TJ = 125 °C) rDS(on) 0.055 Ω VGS = 10 V, ID = 15 A, TJ = 125 °C 2
Drain-Source On-State Resistance (TJ = 175 °C) rDS(on) 0.069 Ω VGS = 10 V, ID = 15 A, TJ = 175 °C 2
Drain-Source On-State Resistance (VGS = 4.5 V) rDS(on) 0.03 Ω VGS = 4.5 V, ID = 10 A 2
Forward Transconductance gfs 20 S VDS = 15 V, ID = 15 A 2
Gate Charge (Total) Qg 11 17 nC VDS = 30 V, VGS = 10 V, ID = 23 A 2
Turn-On Delay Time td(on) 8 15 ns VDD = 30 V, RL = 1.3 Ω, ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω 2
Rise Time tr 15 25 ns VDD = 30 V, RL = 1.3 Ω, ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω 2
Turn-Off Delay Time td(off) 30 45 ns VDD = 30 V, RL = 1.3 Ω, ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω 2
Fall Time tf 25 40 ns VDD = 30 V, RL = 1.3 Ω, ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω 2
Pulsed Current (Source-Drain Diode) ISM 50 A TC = 25 °C 2
Diode Forward Voltage VSD 1 1.5 V VSD = 15 A, VGS = 0 V 2
Reverse Recovery Time trr 30 60 ns IF = 15 A, di/dt = 100 A/µs 2
Input Capacitance Ciss 150 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Output Capacitance Coss 140 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 60 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Gate-Source Charge Qgs 3 nC VDS = 30 V, VGS = 10 V, ID = 23 A 2
Gate-Drain Charge Qgd 3 nC VDS = 30 V, VGS = 10 V, ID = 23 A 2

CAD (KiCad official)

  • Symbol: AOD4130-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: aod4130-vb-etched.step / aod4130-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod4130-vb.step / aod4130-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 256838d36c5dad1a, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF