# AOD409

**Alpha Omega Semicon** · MOSFETs · TO-252-2(DPAK)

AOD409 from Alpha Omega Semicon, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±20 V, with threshold VGS(th) of -1.2 V min to -2.4 V max at ID=-250 µA. |
| 2 | D | passive | Drain, connected to the exposed tab (center lead position); drain-source voltage rating is -60 V and continuous current is -26 A at TC=25°C. |
| 3 | S | passive | Source; maximum body-diode continuous current is -30 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | TO-252-2(DPAK) |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 |  |  | V | TA=25°C unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TA=25°C unless otherwise noted | 1 |
| Continuous Drain Current | ID | -26 |  |  | A | TC=25°C | 1 |
| Continuous Drain Current | ID | -18 |  |  | A | TC=100°C | 1 |
| Pulsed Drain Current | IDM | -60 |  |  | A |  | 1 |
| Avalanche Current | IAR | -26 |  |  | A |  | 1 |
| Repetitive avalanche energy | EAR |  |  | 30 | mJ | L=0.1mH | 1 |
| Power Dissipation | PD |  |  | 60 | W | TC=25°C | 1 |
| Power Dissipation | PD |  |  | 33.8 | W | TC=100°C | 1 |
| Power Dissipation | PDSM |  |  | 2.5 | W | TA=25°C | 1 |
| Power Dissipation | PDSM |  |  | 1.6 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 175 | °C |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -60 |  |  | V | ID=-250µA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  | -0.003 | -1 | µA | VDS=-48V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -5 | µA | VDS=-48V, VGS=0V, TJ=55°C | 2 |
| Gate-Body leakage current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.9 | -2.4 | V | VDS=VGS, ID=-250µA | 2 |
| On state drain current | ID(ON) | -60 |  |  | A | VGS=-10V, VDS=-5V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 32 | 40 | mΩ | VGS=-10V, ID=-20A | 2 |
| Static Drain-Source On-Resistance (TJ=125°C) | RDS(ON) |  | 53 |  | mΩ | VGS=-10V, ID=-20A, TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 43 | 55 | mΩ | VGS=-4.5V, ID=-20A | 2 |
| Diode Forward Voltage | VSD |  | -0.73 | -1 | V | IS=-1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS | -30 |  |  | A |  | 2 |
| Input Capacitance | Ciss |  | 2977 | 3600 | pF | VGS=0V, VDS=-30V, f=1MHz | 2 |
| Gate resistance | Rg |  | 2 | 2.4 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg(10V) |  | 44 | 54 | nC | VGS=-10V, VDS=-30V, ID=-20A | 2 |
| Total Gate Charge | Qg(4.5V) |  | 22.2 | 28 | nC |  | 2 |
| Body Diode Reverse Recovery Time | trr |  | 40 | 50 | ns | IF=-20A, dI/dt=100A/µs | 2 |
| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA |  | 16.7 | 25 | °C/W | t ≤ 10s | 1 |
| Maximum Junction-to-Ambient (Steady-State) | RθJA |  | 40 | 50 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Case | RθJC |  | 1.9 | 2.5 | °C/W | Steady-State | 1 |
| Forward Transconductance | gFS |  | 32 |  | S | VDS=-5V, ID=-20A | 2 |
| Output Capacitance | Coss |  | 241 |  | pF | VGS=0V, VDS=-30V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 153 |  | pF | VGS=0V, VDS=-30V, f=1MHz | 2 |
| Gate Source Charge | Qgs |  | 9 |  | nC | VGS=-10V, VDS=-30V, ID=-20A | 2 |
| Gate Drain Charge | Qgd |  | 10 |  | nC | VGS=-10V, VDS=-30V, ID=-20A | 2 |
| Turn-On Delay Time | tD(on) |  | 12 |  | ns | VGS=-10V, VDS=-30V, RL=1.5Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr |  | 14.5 |  | ns | VGS=-10V, VDS=-30V, RL=1.5Ω, RGEN=3Ω | 2 |
| Turn-Off Delay Time | tD(off) |  | 38 |  | ns | VGS=-10V, VDS=-30V, RL=1.5Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf |  | 15 |  | ns | VGS=-10V, VDS=-30V, RL=1.5Ω, RGEN=3Ω | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 59 |  | nC | IF=-20A, dI/dt=100A/µs | 2 |

## CAD (KiCad official)

- Symbol: `AOD409`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
- 3D model files: `aod409-etched.step` / `aod409-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aod409.step` / `aod409.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha Omega Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586202642868031488) (6 pp, sha256 `356a21bf75cd5b69`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/aod409-datasheet.pdf)