component
AOD407-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAOD407-HXY
HXY MOSFET · MOSFETs · TO-252-2L
AOD407-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±20 V, with a threshold of -1.2 to -2.5 V (VGS(th), ID=-250uA). |
| 2 | D | passive | Drain, connected to the exposed tab; drain-source voltage is rated -60 V and continuous drain current is -10 A at TC=25℃. |
| 3 | S | passive | Source; continuous source (body diode) current is -13 A and the diode forward voltage is at most -1.2 V at IS=-1A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | TC=25℃ unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ unless otherwise noted | 1 | |
| Continuous Drain Current | ID@TC=25℃ | -10 | A | TC=25℃; VGS @ -10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | -8.3 | A | TC=100℃; VGS @ -10V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | -3.3 | A | TA=25℃; VGS @ -10V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | -2.7 | A | TA=70℃; VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -26 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 29.8 | mJ | VDD=-25V, VGS=-10V, L=0.1mH, IAS=-24A | 1 | ||
| Avalanche Current | IAS | -24.4 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 31.3 | W | TC=25℃ | 1 | ||
| Total Power Dissipation | PD@TA=25℃ | 2 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | Junction-Ambient; note 1: surface mounted on 1 inch² FR-4 board, 2oz copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 4 | ℃/W | Junction-Case; note 1 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 125 | 140 | mΩ | VGS=-10V, ID=-3A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 185 | 200 | mΩ | VGS=-4.5V, ID=-2A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | 1.6 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -13 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
AOD407-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
aod407-hxy-etched.step/aod407-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod407-hxy.step/aod407-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
555ca47f3c571b8d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).