component
AOD403-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 12d ago |
| viewers | 12d ago |
| aod403-vb-etched.glb | 12d ago |
| aod403-vb-etched.step | 12d ago |
| aod403-vb-hero.glb | 12d ago |
| aod403-vb-hero.overlay.json | 12d ago |
| aod403-vb.glb | 12d ago |
| aod403-vb.kicad_mod | 12d ago |
| aod403-vb.kicad_sym | 12d ago |
| aod403-vb.lbr | 12d ago |
| aod403-vb.step | 12d ago |
| package.json | 12d ago |
| page.json | 12d ago |
| README.md | 12d ago |
AOD403-VB
VBsemi Elec · MOSFETs · TO-252
AOD403-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, rated for VGS of ±20 V with a threshold of -1 V to -3 V at ID = -250 µA. |
| 2 | D | passive | Drain of the P-channel 30 V MOSFET, continuous current -70 A at TC = 25 °C (package limited), pulsed -240 A; also connected to the tab. |
| 3 | S | passive | Source of the P-channel MOSFET, with continuous body-diode current of -70 A and pulsed -240 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | -70 | A | TJ = 175 °C, TC = 25 °C, package limited | 1 | ||
| Continuous Drain Current | ID | -58 | A | TJ = 175 °C, TC = 125 °C | 1 | ||
| Pulsed Drain Current | IDM | -240 | A | TC = 25 °C | 1 | ||
| Avalanche Current | IAR | -60 | A | TC = 25 °C | 1 | ||
| Repetitive Avalanche Energy | EAR | 180 | mJ | L = 0.1 mH | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 60 | °C/W | PCB Mount, TA = 25 °C | 1 | ||
| Drain-Source Breakdown Voltage | VDS | -30 | V | VGS = 0 V, ID = - 250 µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Body Leakage | IGSS | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = - 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -50 | µA | VDS = - 30 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -250 | µA | VDS = - 30 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | -120 | A | VDS = - 5 V, VGS = - 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.009 | Ω | VGS = - 10 V, ID = - 30 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.012 | Ω | VGS = - 10 V, ID = - 30 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.013 | Ω | VGS = - 10 V, ID = - 30 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.011 | Ω | VGS = - 4.5 V, ID = - 20 A | 2 | ||
| Forward Transconductance | gfs | 20 | S | VDS = - 15 V, ID = - 75 A | 2 | ||
| Input Capacitance | Ciss | 4000 | pF | VGS = 0 V, VDS = - 25 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 1565 | pF | VGS = 0 V, VDS = - 25 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 715 | pF | VGS = 0 V, VDS = - 25 V, f = 1 MHz | 2 | ||
| Total Gate Charge | Qg | 160 | 240 | nC | VDS = - 15 V, VGS = - 10 V, ID = - 75 A | 2 | |
| Gate-Source Charge | Qgs | 32 | nC | VDS = - 15 V, VGS = - 10 V, ID = - 75 A | 2 | ||
| Gate-Drain Charge | Qgd | 30 | nC | VDS = - 15 V, VGS = - 10 V, ID = - 75 A | 2 | ||
| Turn-On Delay Time | td(on) | 25 | 40 | ns | VDD = - 15 V, RL = 0.2 Ω, VGEN = - 10 V, Rg = 2.5 Ω | 2 | |
| Rise Time | tr | 225 | 360 | ns | VDD = - 15 V, RL = 0.2 Ω, VGEN = - 10 V, Rg = 2.5 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 150 | 240 | ns | VDD = - 15 V, RL = 0.2 Ω, VGEN = - 10 V, Rg = 2.5 Ω | 2 | |
| Fall Time | tf | 210 | 340 | ns | VDD = - 15 V, RL = 0.2 Ω, VGEN = - 10 V, Rg = 2.5 Ω | 2 | |
| Continuous Source Current | IS | -70 | A | TC = 25 °C | 2 | ||
| Pulsed Source Current | ISM | -240 | A | TC = 25 °C | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | -1.5 | V | IF = - 75 A, VGS = 0 V | 2 | |
| Reverse Recovery Time | trr | 55 | 100 | ns | IF = - 75 A, dI/dt = 100 A/µs | 2 | |
| Peak Reverse Recovery Current | IRM(REC) | 2.5 | 5 | A | IF = - 75 A, dI/dt = 100 A/µs | 2 | |
| Reverse Recovery Charge | Qrr | 0.07 | 0.25 | µC | IF = - 75 A, dI/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
AOD403-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
aod403-vb-etched.step/aod403-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod403-vb.step/aod403-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
a3969872a0224784, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).