component
AOD403-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
AOD403-HXY
HXY MOSFET · MOSFETs · TO-252-2L
AOD403-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the P-channel MOSFET, with VGS rated ±20 V, threshold -1.2 V to -2.5 V at ID=-250uA, and operation with gate voltages as low as 4.5 V. |
| 2 | D | passive | Drain, connected to the exposed tab (the middle lead is trimmed in the 2L package); VDS = -30 V, continuous ID -70 A at TC=25℃ (package limited), pulsed IDM -200 A. |
| 3 | S | passive | Source; continuous source current IS is -70 A, and the body diode forward voltage VSD is -1.2 V max at IS=-1A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 7 | 10 | mΩ | VGS=-10V, ID=-20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 11 | 18 | mΩ | VGS=-4.5V, ID=-15A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -2.5 | V | VGS=VDS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -70 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | -70 | A | VGS @ -10V (Notes 1,6) | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | -50 | A | VGS @ -10V (Notes 1,6) | 1 | ||
| Pulsed Drain Current | IDM | -200 | A | Note 2 | 1 | ||
| Single Pulse Avalanche Energy | EAS | 80 | mJ | VDD=-50V,VGS=-10V,L=0.1mH,IAS=-40A (Note 3) | 1 | ||
| Avalanche Current | IAS | -40 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 90 | W | TC=25℃ (Note 4) | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 20 | ℃/W | t≦10S (surface mounted on 1 inch² FR-4 board, 2OZ copper, Note 1) | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 50 | ℃/W | Steady State (Note 1) | 1 | ||
| Thermal Resistance Junction-case | RθJC | 1.6 | ℃/W | Note 1 | 1 |
CAD (KiCad official)
- Symbol:
AOD403-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
aod403-hxy-etched.step/aod403-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod403-hxy.step/aod403-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
d0aec488c71cde79, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AOD403-HXY
**HXY MOSFET** · MOSFETs · TO-252-2L
AOD403-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the P-channel MOSFET, with VGS rated ±20 V, threshold -1.2 V to -2.5 V at ID=-250uA, and operation with gate voltages as low as 4.5 V. |
| 2 | D | passive | Drain, connected to the exposed tab (the middle lead is trimmed in the 2L package); VDS = -30 V, continuous ID -70 A at TC=25℃ (package limited), pulsed IDM -200 A. |
| 3 | S | passive | Source; continuous source current IS is -70 A, and the body diode forward voltage VSD is -1.2 V max at IS=-1A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 7 | 10 | mΩ | VGS=-10V, ID=-20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 11 | 18 | mΩ | VGS=-4.5V, ID=-15A | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 | | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS | | | -70 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | | | -30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TC=25℃ | | | -70 | A | VGS @ -10V (Notes 1,6) | 1 |
| Continuous Drain Current | ID@TC=100℃ | | | -50 | A | VGS @ -10V (Notes 1,6) | 1 |
| Pulsed Drain Current | IDM | | | -200 | A | Note 2 | 1 |
| Single Pulse Avalanche Energy | EAS | | | 80 | mJ | VDD=-50V,VGS=-10V,L=0.1mH,IAS=-40A (Note 3) | 1 |
| Avalanche Current | IAS | | | -40 | A | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 90 | W | TC=25℃ (Note 4) | 1 |
| Storage Temperature Range | TSTG | -55 | | 175 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 175 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 20 | ℃/W | t≦10S (surface mounted on 1 inch² FR-4 board, 2OZ copper, Note 1) | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 50 | ℃/W | Steady State (Note 1) | 1 |
| Thermal Resistance Junction-case | RθJC | | | 1.6 | ℃/W | Note 1 | 1 |
## CAD (KiCad official)
- Symbol: `AOD403-HXY`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `aod403-hxy-etched.step` / `aod403-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aod403-hxy.step` / `aod403-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757975273600237568) (6 pp, sha256 `d0aec488c71cde79`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/aod403-hxy-datasheet.pdf)