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AOD2916-HXY

Public Made by Adom

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HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AOD2916-HXY

HXY MOSFET · MOSFETs · TO-252-2L

AOD2916-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; control input with VGS rated ±20 V maximum and threshold of 1.0 to 2.2 V (drive fully at 4.5 V or 10 V).
2 D passive Drain; connected to the tab, with VDS rated 100 V maximum and continuous ID of 30 A at TC=25℃.
3 S passive Source; main current return terminal of the N-channel MOSFET, with body diode continuous current rated 27 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.2 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 37 48 mΩ VGS=10V, ID=10A 2
Static Drain-Source on-Resistance RDS(on) 39 55 mΩ VGS=4.5V, ID=6A 2
Maximum Continuous Drain to Source Diode Forward Current IS 27 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 80 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=20A 2
Drain-Source Voltage VDS 100 V Tc=25℃ 1
Gate-Source Voltage VGS -20 20 V Tc=25℃ 1
Continuous Drain Current ID@TC=25℃ 30 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 13 A VGS @ 10V 1
Pulsed Drain Current IDM 80 A 1
Single Pulse Avalanche Energy EAS 30 mJ TJ=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω, IAS=11A 2
Total Power Dissipation PD@TC=25℃ 42 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Case RθJC 3.6 ℃/W 1
Input Capacitance Ciss 1964 pF VDS=25V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 90 pF VDS=25V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 74 pF VDS=25V, VGS=0V, f=1.0MHz 2
Total Gate Charge Qg 20 nC VDS=80V, ID=20A, VGS=4.5V 2
Gate-Source Charge Qgs 3.1 nC VDS=80V, ID=20A, VGS=4.5V 2
Gate-Drain Charge Qgd 14 nC VDS=80V, ID=20A, VGS=4.5V 2
Turn-on Delay Time td(on) 11 ns VDS=80V, ID=20A, RG=3.1Ω, VGS=4.5V 2
Turn-on Rise Time tr 91 ns VDS=80V, ID=20A, RG=3.1Ω, VGS=4.5V 2
Turn-off Delay Time td(off) 40 ns VDS=80V, ID=20A, RG=3.1Ω, VGS=4.5V 2
Turn-off Fall Time tf 71 ns VDS=80V, ID=20A, RG=3.1Ω, VGS=4.5V 2
Body Diode Reverse Recovery Time trr 64 ns IF=20A, dI/dt=100A/μs 2
Body Diode Reverse Recovery Charge Qrr 152 nC IF=20A, dI/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: AOD2916-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: aod2916-hxy-etched.step / aod2916-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod2916-hxy.step / aod2916-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 73ab62256056ac26, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF