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AOD2610E-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAOD2610E-HXY
HXY MOSFET · MOSFETs · TO-252-2L
AOD2610E-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet rates VGS at ±20 V and specifies RDS(ON) at VGS = 4.5 V and 10 V. |
| 2 | D | passive | Drain terminal; rated for VDS = 60 V, with continuous drain current ID of 80 A at TC = 25℃ at VGS = 10 V. |
| 3 | S | passive | Source terminal, the reference for VGS, and the body-diode forward voltage VSD is specified at up to 1.3 V with IS = 45 A and VGS = 0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 1.4 | 3 | V | VDS=VGS, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 6 | 8 | mΩ | VGS=10V, ID=45A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 8.3 | 15 | mΩ | VGS=4.5V, ID=30A | 2 | |
| Drain-Source Leakage Current | IDSS | 10 | uA | VDS=60V, VGS=0V | 2 | ||
| Drain-Source Leakage Current (Tj=125°C) | IDSS | 250 | uA | Tj=125°C, VDS=48V, VGS=0V | 2 | ||
| Gate-Source Leakage | IGSS | 100 | nA | VGS=+20V, VDS=0V | 2 | ||
| Total Gate Charge | Qg | 33 | 45 | nC | ID=30A, VDS=48V, VGS=4.5V | 2 | |
| Input Capacitance | Ciss | 2680 | 3300 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | |
| Forward On Voltage | VSD | 1.3 | V | IS=45A, VGS=0V | 2 | ||
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current, VGS @ 10V (TC=25°C) | ID@TC=25℃ | 80 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current, VGS @ 10V (TC=100°C) | ID@TC=100℃ | 43 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 272 | A | 1 | |||
| Avalanche Current | IAS | 28 | A | 1 | |||
| Total Power Dissipation (TC=25°C) | PD@TC=25℃ | 104 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62.5 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
AOD2610E-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
aod2610e-hxy-etched.step/aod2610e-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod2610e-hxy.step/aod2610e-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
fdcca43f4d628acd, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).