# AOD2210

**Alpha Omega Semicon** · MOSFETs · TO-252

AOD2210 from Alpha Omega Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 200V N-channel MOSFET, with gate-source voltage rated at ±20V maximum. |
| 2 | D | passive | Drain terminal, rated for 200V drain-source and 18A continuous drain current at VGS=10V, and electrically connected to the exposed drain tab. |
| 3 | S | passive | Source terminal, referenced to the 200V drain-source and ±20V gate-source ratings. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 200 |  |  | V | ID=250µA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS=200V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 5 | µA | VDS=200V, VGS=0V, TJ=55°C | 2 |
| Gate-Body leakage current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VDS=VGS, ID=250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 87 | 105 | mΩ | VGS=10V, ID=18A | 2 |
| Static Drain-Source On-Resistance at TJ=125°C | RDS(ON) |  | 185 | 225 | mΩ | VGS=10V, ID=18A, TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 93 | 120 | mΩ | VGS=5V, ID=16A | 2 |
| Diode Forward Voltage | VSD |  | 0.7 | 1 | V | IS=1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 18 | A |  | 2 |
| Gate resistance | Rg | 1.1 | 2.2 | 3.3 | Ω | f=1MHz | 2 |
| Total Gate Charge (10V) | Qg (10V) |  | 27 | 40 | nC | VGS=10V, VDS=100V, ID=18A | 2 |
| Total Gate Charge (4.5V) | Qg (4.5V) |  | 12 | 20 | nC |  | 2 |
| Drain-Source Voltage | VDS |  |  | 200 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 18 | A | TC=25°C | 1 |
| Continuous Drain Current | ID |  |  | 13 | A | TC=100°C | 1 |
| Pulsed Drain Current | IDM |  |  | 45 | A |  | 1 |
| Power Dissipation | PDSM |  |  | 2.5 | W | TA=25°C | 1 |
| Power Dissipation | PDSM |  |  | 1.6 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 175 | °C |  | 1 |
| Maximum Junction-to-Ambient (t≤10s) | RθJA |  | 15 | 20 | °C/W | t≤10s | 1 |
| Maximum Junction-to-Ambient (steady state) | RθJA |  | 41 | 50 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Case | RθJC |  |  | 1.5 | °C/W | Steady-State | 4 |

## CAD (KiCad official)

- Symbol: `AOD2210`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `aod2210-etched.step` / `aod2210-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aod2210.step` / `aod2210.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha Omega Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588954146338164736) (6 pp, sha256 `8a1448c73224a64b`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/aod2210-datasheet.pdf)