# AOB10B65M1

**Alpha Omega Semicon** · IGBT Transistors / Modules · TO-263

AOB10B65M1 from Alpha Omega Semicon, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the gate-emitter voltage is rated at ±30V absolute maximum, with a typical threshold of 5.1V (4.5V to 5.7V). |
| 2 | C | passive | Collector (also the exposed tab, per the package picture), rated at 650V collector-emitter voltage and 20A continuous at TC=25°C (10A at TC=100°C). |
| 3 | E | passive | Emitter, which is the anode side of the anti-parallel diode, with continuous diode forward current of 20A at TC=25°C (10A at TC=100°C). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | BV CES | 650 |  |  | V | IC=1mA, VGE=0V, TJ=25°C | 2 |
| Gate-Emitter Threshold Voltage | V GE(th) | 4.5 | 5.1 | 5.7 | V | VCE=5V, IC=1mA | 2 |
| Zero Gate Voltage Collector Current | I CES |  |  | 10 | mA | VCE=650V, VGE=0V, TJ=25°C | 2 |
| Zero Gate Voltage Collector Current | I CES |  |  | 100 | mA | VCE=650V, VGE=0V, TJ=125°C | 2 |
| Zero Gate Voltage Collector Current | I CES |  |  | 1000 | mA | VCE=650V, VGE=0V, TJ=175°C | 2 |
| Gate-Emitter leakage current | I GES | -100 |  | 100 | nA | VCE=0V, VGE=±30V | 2 |
| Collector-Emitter Saturation Voltage | V CE(sat) |  | 1.6 | 2 | V | VGE=15V, IC=10A, TJ=25°C | 2 |
| Diode Forward Voltage | VF |  | 1.9 | 2.4 | V | VGE=0V, IC=10A, TJ=25°C | 2 |
| Collector-Emitter Voltage | VCE |  |  | 650 | V |  | 1 |
| Gate-Emitter Voltage | VGE | -30 |  | 30 | V |  | 1 |
| Continuous Collector Current | IC |  |  | 20 | A | TC=25°C | 1 |
| Continuous Collector Current | IC |  |  | 10 | A | TC=100°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 175 | °C |  | 1 |
| Maximum lead temperature for soldering purpose | TL |  |  | 300 | °C | 1/8" from case for 5 seconds | 1 |
| Maximum IGBT Junction-to-Case | RθJC |  |  | 1 | °C/W |  | 8 |
| Maximum Diode Junction-to-Case | RθJC |  |  | 3.3 | °C/W |  | 8 |
| Maximum Junction-to-Ambient | RθJA |  |  | 65 | °C/W |  | 1 |

## CAD (KiCad official)

- Symbol: `AOB10B65M1`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `aob10b65m1-etched.step` / `aob10b65m1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aob10b65m1.step` / `aob10b65m1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha Omega Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603113521132040192) (9 pp, sha256 `da9fb6e7ab004323`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/aob10b65m1-datasheet.pdf)