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AO8820-VB

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VBsemi Elec MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorao8820-vbfactory-2.0.0extractor-text

Verified AO8820-VB

by Ray · last 6 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

6 Nov 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AO8820-VB · TSSOP-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TSSOP-8_4.4x3mm_P0.65mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-n1nszb4e/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.6)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ao8820-vb.kicad_sym✓ ao8820-vb.kicad_mod✓ ao8820-vb.step
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Ray Publish 0.1.0 5fd2d00 21h ago

AO8820-VB

VBsemi Elec · MOSFETs · TSSOP-8

AO8820-VB from VBsemi Elec, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Common drain of the dual N-channel MOSFET, tied to pin 8 externally in the schematic; VDS max 25 V.
2 S1 passive Source of MOSFET 1; continuous drain current 6.6 A (10 s) and 5.2 A steady state at TA = 25 °C.
3 S1 passive Source of MOSFET 1, second source pin tied to pin 2; continuous drain current 6.6 A (10 s) at TA = 25 °C.
4 G1 input Gate of MOSFET 1; gate-source voltage limited to ±12 V, threshold 0.5 V min to 1.0 V.
5 G2 input Gate of MOSFET 2; gate-source voltage limited to ±12 V, threshold 0.5 V min to 1.0 V.
6 S2 passive Source of MOSFET 2; continuous drain current 6.6 A (10 s) and 5.2 A steady state at TA = 25 °C.
7 S2 passive Source of MOSFET 2, second source pin tied to pin 6; continuous drain current 6.6 A (10 s) at TA = 25 °C.
8 D passive Common drain of the dual N-channel MOSFET, tied to pin 1 externally in the schematic; VDS max 25 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSSOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 25 V TA = 25 °C unless noted 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current (TJ = 150 °C), TA = 25 °C ID 6.6 A t ≤ 10 s 1
Continuous Drain Current (TJ = 150 °C), TA = 25 °C ID 5.2 A Steady state 1
Continuous Drain Current (TJ = 150 °C), TA = 70 °C ID 5.5 A t ≤ 10 s 1
Continuous Drain Current (TJ = 150 °C), TA = 70 °C ID 3.5 A Steady state 1
Pulsed Drain Current IDM 30 A 1
Continuous Source Current (Diode Conduction) IS 1.5 A t ≤ 10 s 1
Continuous Source Current (Diode Conduction) IS 1 A Steady state 1
Maximum Power Dissipation, TA = 25 °C PD 1.5 W t ≤ 10 s 1
Maximum Power Dissipation, TA = 25 °C PD 1 W Steady state 1
Maximum Power Dissipation, TA = 70 °C PD 0.96 W t ≤ 10 s 1
Maximum Power Dissipation, TA = 70 °C PD 0.64 W Steady state 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 72 83 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient RthJA 100 120 °C/W Steady state 1
Maximum Junction-to-Foot (Drain) RthJF 55 70 °C/W Steady state 1
Gate Threshold Voltage VGS(th) 0.5 1 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -200 200 nA VDS = 0 V, VGS = ± 4.5 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 25 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 25 µA VDS = 25 V, VGS = 0 V, TJ = 70 °C 2
On-State Drain Current ID(on) 30 A VDS ≤ 5 V, VGS = 4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.022 Ω VGS = 4.5 V, ID = 6.5 A 2
Drain-Source On-State Resistance RDS(on) 0.032 Ω VGS = 2.5 V, ID = 5.5 A 2
Diode Forward Voltage VSD 0.71 1.2 V IS = 1.5 A, VGS = 0 V 2
Total Gate Charge Qg 12 18 nC VDS = 10 V, VGS = 4.5 V, ID = 6.5 A 2
Turn-On Delay Time td(on) 245 365 ns VDD = 10 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω 2
Rise Time tr 330 495 ns VDD = 10 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω 2
Turn-Off Delay Time td(off) 860 1300 ns VDD = 10 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω 2
Fall Time tf 510 765 ns VDD = 10 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω 2

CAD (KiCad official)

  • Symbol: AO8820-VB
  • Footprint: Package_SO:TSSOP-8_4.4x3mm_P0.65mm
  • 3D model: TSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: ao8820-vb-etched.step / ao8820-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao8820-vb.step / ao8820-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 465e3c6fa7914696, retrieved 2026-11-06, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF