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AO8814

Public Made by Adom

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Alpha Omega Semicon MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AO8814

Alpha Omega Semicon · MOSFETs · TSSOP-8

AO8814 from Alpha Omega Semicon, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D1/D2 passive Common drain of both N-channel MOSFETs (VDS max 20V), tied to pin 8.
2 S1 passive Source of MOSFET 1, rated for 7.5A continuous drain current at TA=25°C.
3 S1 passive Source of MOSFET 1, rated for 7.5A continuous drain current at TA=25°C.
4 G1 input Gate of MOSFET 1, ±12V max gate-source voltage, usable down to 1.8V drive, ESD 2500V HBM.
5 G2 input Gate of MOSFET 2, ±12V max gate-source voltage, usable down to 1.8V drive, ESD 2500V HBM.
6 S2 passive Source of MOSFET 2, rated for 7.5A continuous drain current at TA=25°C.
7 S2 passive Source of MOSFET 2, rated for 7.5A continuous drain current at TA=25°C.
8 D1/D2 passive Common drain of both N-channel MOSFETs (VDS max 20V), tied to pin 1.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package TSSOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 V ID=250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=16V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS=16V, VGS=0V, TJ=55°C 2
Gate-Body leakage current IGSS 10 µA VDS=0V, VGS=±10V 2
Gate-Source Breakdown Voltage BVGSO 12 V VDS=0V, IG=±250uA 2
Gate Threshold Voltage VGS(th) 0.5 0.71 1 V VDS=VGS ID=250µA 2
On state drain current ID(ON) 30 A VGS=4.5V, VDS=5V 2
Static Drain-Source On-Resistance RDS(ON) 10 13 16 mΩ VGS=10V, ID=7.5A 2
Static Drain-Source On-Resistance RDS(ON) 14 18 22 mΩ TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 11.5 15 18 mΩ VGS=4.5V, ID=7A 2
Static Drain-Source On-Resistance RDS(ON) 13 16.8 20 mΩ VGS=3.6V, ID=6A 2
Static Drain-Source On-Resistance RDS(ON) 15 19 24 mΩ VGS=2.5V, ID=6A 2
Static Drain-Source On-Resistance RDS(ON) 20 26 34 mΩ VGS=1.8V, ID=5A 2
Diode Forward Voltage VSD 0.74 1 V IS=1A, VGS=0V 2
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 7.5 A TA=25°C 1
Continuous Drain Current ID 6 A TA=70°C 1
Pulsed Drain Current IDM 30 A 1
Power Dissipation PD 1.5 W TA=25°C 1
Power Dissipation PD 0.96 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient (t ≤ 10s) RθJA 64 83 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient (Steady-State) RθJA 89 120 °C/W Steady-State 1
Maximum Junction-to-Lead (Steady-State) RθJL 53 70 °C/W Steady-State 1

CAD (KiCad official)

  • Symbol: AO8814
  • Footprint: Package_SO:TSSOP-8_3x3mm_P0.65mm
  • 3D model: TSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: ao8814-etched.step / ao8814-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao8814.step / ao8814.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (4 pp, sha256 efaffa331681e26e, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF