component
AO7600-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SC-70-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AO7600-VB
VBsemi Elec · MOSFETs · SC-70-6
AO7600-VB from VBsemi Elec, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (20 V VDS, 3.28 A at TA = 25 °C for 5 s). |
| 2 | G1 | input | Gate of the N-channel MOSFET, rated ±20 V VGS maximum with 1.8 V rated drive. |
| 3 | D2 | passive | Drain of the P-channel MOSFET (-20 V VDS, -2.80 A at TA = 25 °C for 5 s). |
| 4 | S2 | passive | Source of the P-channel MOSFET (-20 V VDS rating). |
| 5 | G2 | input | Gate of the P-channel MOSFET, rated ±20 V VGS maximum with -1.8 V rated drive. |
| 6 | D1 | passive | Drain of the N-channel MOSFET (20 V VDS, RDS(on) 0.090 Ω at VGS = 4.5 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SC-70-6 |
| Category | Transistors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage N-Ch | VDS | 20 | V | N-Channel, TA = 25 °C | 1 | ||
| Drain-Source Voltage P-Ch | VDS | -20 | V | P-Channel, TA = 25 °C | 1 | ||
| Gate-Source Voltage N-Ch | VGS | -20 | 20 | V | N-Channel | 1 | |
| Gate-Source Voltage P-Ch | VGS | -20 | 20 | V | P-Channel | 1 | |
| Continuous Drain Current N-Ch, 5 s | ID | 3.28 | A | TJ = 150 °C, TA = 25 °C, 5 s, N-Channel | 1 | ||
| Continuous Drain Current N-Ch, steady state | ID | 3.03 | A | TJ = 150 °C, TA = 25 °C, steady state, N-Channel | 1 | ||
| Continuous Drain Current P-Ch, 5 s | ID | -2.8 | A | TJ = 150 °C, TA = 25 °C, 5 s, P-Channel | 1 | ||
| Continuous Drain Current P-Ch, steady state | ID | -2.58 | A | TJ = 150 °C, TA = 25 °C, steady state, P-Channel | 1 | ||
| Pulsed Drain Current N-Ch | IDM | 9.5 | A | N-Channel | 1 | ||
| Pulsed Drain Current P-Ch | IDM | -8.5 | A | P-Channel | 1 | ||
| Continuous Source Current N-Ch, 5 s | IS | 2.61 | A | Diode conduction, 5 s, N-Channel | 1 | ||
| Continuous Source Current N-Ch, steady state | IS | 2.48 | A | Diode conduction, steady state, N-Channel | 1 | ||
| Continuous Source Current P-Ch, 5 s | IS | -1.61 | A | Diode conduction, 5 s, P-Channel | 1 | ||
| Continuous Source Current P-Ch, steady state | IS | -1.48 | A | Diode conduction, steady state, P-Channel | 1 | ||
| Maximum Power Dissipation N-Ch, 5 s | PD | 1.24 | W | TA = 25 °C, 5 s, N-Channel | 1 | ||
| Maximum Power Dissipation N-Ch, steady state | PD | 1.17 | W | TA = 25 °C, steady state, N-Channel | 1 | ||
| Maximum Power Dissipation P-Ch, 5 s | PD | 1.1 | W | TA = 25 °C, 5 s, P-Channel | 1 | ||
| Maximum Power Dissipation P-Ch, steady state | PD | 0.97 | W | TA = 25 °C, steady state, P-Channel | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance, t ≤ 5 s | RthJA | 130 | 170 | °C/W | t ≤ 5 s, surface mounted on 1" x 1" FR4 board | 1 | |
| Junction-to-Ambient Thermal Resistance, steady state | RthJA | 170 | 220 | °C/W | Steady state, surface mounted on 1" x 1" FR4 board | 1 | |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | 80 | 100 | °C/W | Steady state | 1 | |
| Gate Threshold Voltage N-Ch | VGS(th) | 0.45 | 1 | V | VDS = VGS, ID = 100 µA, N-Ch | 2 | |
| Gate Threshold Voltage P-Ch | VGS(th) | -1 | -0.45 | V | VDS = VGS, ID = -100 µA, P-Ch | 2 | |
| Gate-Body Leakage N-Ch | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 8 V, N-Ch | 2 | |
| Gate-Body Leakage P-Ch | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 8 V, P-Ch | 2 | |
| Zero Gate Voltage Drain Current N-Ch | IDSS | 1 | µA | VDS = 16 V, VGS = 0 V, N-Ch | 2 | ||
| Zero Gate Voltage Drain Current P-Ch | IDSS | -1 | µA | VDS = -16 V, VGS = 0 V, P-Ch | 2 | ||
| Zero Gate Voltage Drain Current N-Ch, 85 °C | IDSS | 5 | µA | VDS = 16 V, VGS = 0 V, TJ = 85 °C, N-Ch | 2 | ||
| Zero Gate Voltage Drain Current P-Ch, 85 °C | IDSS | -5 | µA | VDS = -16 V, VGS = 0 V, TJ = 85 °C, P-Ch | 2 | ||
| On-State Drain Current N-Ch | ID(on) | 2 | A | VDS ≥ 5 V, VGS = 4.5 V, N-Ch | 2 | ||
| On-State Drain Current P-Ch | ID(on) | -2 | A | VDS ≤ -5 V, VGS = -4.5 V, P-Ch | 2 | ||
| Drain-Source On-State Resistance N-Ch 4.5 V | RDS(on) | 0.09 | Ω | VGS = 4.5 V, ID = 2.55 A, N-Ch | 2 | ||
| Drain-Source On-State Resistance P-Ch 4.5 V | RDS(on) | 0.155 | Ω | VGS = -4.5 V, ID = -1.85 A, P-Ch | 2 | ||
| Drain-Source On-State Resistance N-Ch 2.5 V | RDS(on) | 0.11 | Ω | VGS = 2.5 V, ID = 1.55 A, N-Ch | 2 | ||
| Drain-Source On-State Resistance P-Ch 2.5 V | RDS(on) | 0.19 | Ω | VGS = -2.5 V, ID = -1.35 A, P-Ch | 2 | ||
| Drain-Source On-State Resistance N-Ch 1.8 V | RDS(on) | 0.13 | Ω | VGS = 1.8 V, ID = 0.50 A, N-Ch | 2 | ||
| Drain-Source On-State Resistance P-Ch 1.8 V | RDS(on) | 0.22 | Ω | VGS = -1.8 V, ID = -0.50 A, P-Ch | 2 | ||
| Diode Forward Voltage N-Ch | VSD | 0.8 | 1.2 | V | IS = 0.48 A, VGS = 0 V, N-Ch | 2 | |
| Diode Forward Voltage P-Ch | VSD | -0.8 | -1.2 | V | IS = -0.48 A, VGS = 0 V, P-Ch | 2 | |
| Total Gate Charge N-Ch | Qg | 1.25 | 2 | nC | VDS = 10 V, VGS = 4.5 V, ID = 2.55 A, N-Ch | 2 | |
| Total Gate Charge P-Ch | Qg | 1.2 | 1.8 | nC | VDS = -10 V, VGS = -4.5 V, ID = -0.88 A, P-Ch | 2 | |
| Turn-On Delay Time N-Ch | td(on) | 15 | 25 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω, N-Ch | 2 | |
| Turn-On Delay Time P-Ch | td(on) | 18 | 30 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω, P-Ch | 2 | |
| Rise Time N-Ch | tr | 22 | 35 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω, N-Ch | 2 | |
| Rise Time P-Ch | tr | 25 | 40 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω, P-Ch | 2 | |
| Turn-Off Delay Time N-Ch | td(off) | 25 | 40 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω, N-Ch | 2 | |
| Turn-Off Delay Time P-Ch | td(off) | 15 | 25 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω, P-Ch | 2 | |
| Fall Time N-Ch | tf | 12 | 20 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω, N-Ch | 2 | |
| Fall Time P-Ch | tf | 12 | 20 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω, P-Ch | 2 | |
| Reverse Recovery Time | trr | 30 | 60 | ns | IF = 0.48 A, dI/dt = 100 A/µs, N-Ch and P-Ch | 2 | |
| Forward Transconductance N-Ch | gfs | 2.6 | S | VDS = 10 V, ID = 1.13 A, N-Ch | 2 | ||
| Forward Transconductance P-Ch | gfs | 1.5 | S | VDS = -10 V, ID = -0.88 A, P-Ch | 2 |
CAD (KiCad official)
- Symbol:
AO7600-VB - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SC-70-6 (KiCad packages3D, STEP)
- 3D model files:
ao7600-vb-etched.step/ao7600-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao7600-vb.step/ao7600-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (10 pp, sha256
891c3cd07d9cffef, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AO7600-VB
**VBsemi Elec** · MOSFETs · SC-70-6
AO7600-VB from VBsemi Elec, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (20 V VDS, 3.28 A at TA = 25 °C for 5 s). |
| 2 | G1 | input | Gate of the N-channel MOSFET, rated ±20 V VGS maximum with 1.8 V rated drive. |
| 3 | D2 | passive | Drain of the P-channel MOSFET (-20 V VDS, -2.80 A at TA = 25 °C for 5 s). |
| 4 | S2 | passive | Source of the P-channel MOSFET (-20 V VDS rating). |
| 5 | G2 | input | Gate of the P-channel MOSFET, rated ±20 V VGS maximum with -1.8 V rated drive. |
| 6 | D1 | passive | Drain of the N-channel MOSFET (20 V VDS, RDS(on) 0.090 Ω at VGS = 4.5 V). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SC-70-6 |
| Category | Transistors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage N-Ch | VDS | | | 20 | V | N-Channel, TA = 25 °C | 1 |
| Drain-Source Voltage P-Ch | VDS | | | -20 | V | P-Channel, TA = 25 °C | 1 |
| Gate-Source Voltage N-Ch | VGS | -20 | | 20 | V | N-Channel | 1 |
| Gate-Source Voltage P-Ch | VGS | -20 | | 20 | V | P-Channel | 1 |
| Continuous Drain Current N-Ch, 5 s | ID | | | 3.28 | A | TJ = 150 °C, TA = 25 °C, 5 s, N-Channel | 1 |
| Continuous Drain Current N-Ch, steady state | ID | | | 3.03 | A | TJ = 150 °C, TA = 25 °C, steady state, N-Channel | 1 |
| Continuous Drain Current P-Ch, 5 s | ID | | | -2.8 | A | TJ = 150 °C, TA = 25 °C, 5 s, P-Channel | 1 |
| Continuous Drain Current P-Ch, steady state | ID | | | -2.58 | A | TJ = 150 °C, TA = 25 °C, steady state, P-Channel | 1 |
| Pulsed Drain Current N-Ch | IDM | | | 9.5 | A | N-Channel | 1 |
| Pulsed Drain Current P-Ch | IDM | | | -8.5 | A | P-Channel | 1 |
| Continuous Source Current N-Ch, 5 s | IS | | | 2.61 | A | Diode conduction, 5 s, N-Channel | 1 |
| Continuous Source Current N-Ch, steady state | IS | | | 2.48 | A | Diode conduction, steady state, N-Channel | 1 |
| Continuous Source Current P-Ch, 5 s | IS | | | -1.61 | A | Diode conduction, 5 s, P-Channel | 1 |
| Continuous Source Current P-Ch, steady state | IS | | | -1.48 | A | Diode conduction, steady state, P-Channel | 1 |
| Maximum Power Dissipation N-Ch, 5 s | PD | | | 1.24 | W | TA = 25 °C, 5 s, N-Channel | 1 |
| Maximum Power Dissipation N-Ch, steady state | PD | | | 1.17 | W | TA = 25 °C, steady state, N-Channel | 1 |
| Maximum Power Dissipation P-Ch, 5 s | PD | | | 1.1 | W | TA = 25 °C, 5 s, P-Channel | 1 |
| Maximum Power Dissipation P-Ch, steady state | PD | | | 0.97 | W | TA = 25 °C, steady state, P-Channel | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Junction-to-Ambient Thermal Resistance, t ≤ 5 s | RthJA | | 130 | 170 | °C/W | t ≤ 5 s, surface mounted on 1" x 1" FR4 board | 1 |
| Junction-to-Ambient Thermal Resistance, steady state | RthJA | | 170 | 220 | °C/W | Steady state, surface mounted on 1" x 1" FR4 board | 1 |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | | 80 | 100 | °C/W | Steady state | 1 |
| Gate Threshold Voltage N-Ch | VGS(th) | 0.45 | | 1 | V | VDS = VGS, ID = 100 µA, N-Ch | 2 |
| Gate Threshold Voltage P-Ch | VGS(th) | -1 | | -0.45 | V | VDS = VGS, ID = -100 µA, P-Ch | 2 |
| Gate-Body Leakage N-Ch | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 8 V, N-Ch | 2 |
| Gate-Body Leakage P-Ch | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 8 V, P-Ch | 2 |
| Zero Gate Voltage Drain Current N-Ch | IDSS | | | 1 | µA | VDS = 16 V, VGS = 0 V, N-Ch | 2 |
| Zero Gate Voltage Drain Current P-Ch | IDSS | | | -1 | µA | VDS = -16 V, VGS = 0 V, P-Ch | 2 |
| Zero Gate Voltage Drain Current N-Ch, 85 °C | IDSS | | | 5 | µA | VDS = 16 V, VGS = 0 V, TJ = 85 °C, N-Ch | 2 |
| Zero Gate Voltage Drain Current P-Ch, 85 °C | IDSS | | | -5 | µA | VDS = -16 V, VGS = 0 V, TJ = 85 °C, P-Ch | 2 |
| On-State Drain Current N-Ch | ID(on) | 2 | | | A | VDS ≥ 5 V, VGS = 4.5 V, N-Ch | 2 |
| On-State Drain Current P-Ch | ID(on) | | | -2 | A | VDS ≤ -5 V, VGS = -4.5 V, P-Ch | 2 |
| Drain-Source On-State Resistance N-Ch 4.5 V | RDS(on) | | | 0.09 | Ω | VGS = 4.5 V, ID = 2.55 A, N-Ch | 2 |
| Drain-Source On-State Resistance P-Ch 4.5 V | RDS(on) | | | 0.155 | Ω | VGS = -4.5 V, ID = -1.85 A, P-Ch | 2 |
| Drain-Source On-State Resistance N-Ch 2.5 V | RDS(on) | | | 0.11 | Ω | VGS = 2.5 V, ID = 1.55 A, N-Ch | 2 |
| Drain-Source On-State Resistance P-Ch 2.5 V | RDS(on) | | | 0.19 | Ω | VGS = -2.5 V, ID = -1.35 A, P-Ch | 2 |
| Drain-Source On-State Resistance N-Ch 1.8 V | RDS(on) | | | 0.13 | Ω | VGS = 1.8 V, ID = 0.50 A, N-Ch | 2 |
| Drain-Source On-State Resistance P-Ch 1.8 V | RDS(on) | | | 0.22 | Ω | VGS = -1.8 V, ID = -0.50 A, P-Ch | 2 |
| Diode Forward Voltage N-Ch | VSD | | 0.8 | 1.2 | V | IS = 0.48 A, VGS = 0 V, N-Ch | 2 |
| Diode Forward Voltage P-Ch | VSD | | -0.8 | -1.2 | V | IS = -0.48 A, VGS = 0 V, P-Ch | 2 |
| Total Gate Charge N-Ch | Qg | | 1.25 | 2 | nC | VDS = 10 V, VGS = 4.5 V, ID = 2.55 A, N-Ch | 2 |
| Total Gate Charge P-Ch | Qg | | 1.2 | 1.8 | nC | VDS = -10 V, VGS = -4.5 V, ID = -0.88 A, P-Ch | 2 |
| Turn-On Delay Time N-Ch | td(on) | | 15 | 25 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω, N-Ch | 2 |
| Turn-On Delay Time P-Ch | td(on) | | 18 | 30 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω, P-Ch | 2 |
| Rise Time N-Ch | tr | | 22 | 35 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω, N-Ch | 2 |
| Rise Time P-Ch | tr | | 25 | 40 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω, P-Ch | 2 |
| Turn-Off Delay Time N-Ch | td(off) | | 25 | 40 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω, N-Ch | 2 |
| Turn-Off Delay Time P-Ch | td(off) | | 15 | 25 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω, P-Ch | 2 |
| Fall Time N-Ch | tf | | 12 | 20 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω, N-Ch | 2 |
| Fall Time P-Ch | tf | | 12 | 20 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω, P-Ch | 2 |
| Reverse Recovery Time | trr | | 30 | 60 | ns | IF = 0.48 A, dI/dt = 100 A/µs, N-Ch and P-Ch | 2 |
| Forward Transconductance N-Ch | gfs | | 2.6 | | S | VDS = 10 V, ID = 1.13 A, N-Ch | 2 |
| Forward Transconductance P-Ch | gfs | | 1.5 | | S | VDS = -10 V, ID = -0.88 A, P-Ch | 2 |
## CAD (KiCad official)
- Symbol: `AO7600-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SC-70-6 (KiCad packages3D, STEP)
- 3D model files: `ao7600-vb-etched.step` / `ao7600-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao7600-vb.step` / `ao7600-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/ao7600-vb-datasheet.pdf) (10 pp, sha256 `891c3cd07d9cffef`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ao7600-vb-datasheet.pdf)