component

AO6801-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorao6801-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
ao6801-vb / README.md
History Download
Ray Publish 0.1.0 546a599 1d ago

AO6801-VB

VBsemi Elec · MOSFETs · TSOP-6

AO6801-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of P-channel MOSFET 1, with gate-source voltage limited to ±12 V.
2 S2 passive Source of P-channel MOSFET 2 (the pin label S2 is printed at package pin 2 in the top view).
3 G2 input Gate of P-channel MOSFET 2, with gate-source voltage limited to ±12 V.
4 D2 passive Drain of P-channel MOSFET 2, rated for -20 V drain-source and -4.0 A continuous at TC = 25 °C.
5 S1 passive Source of P-channel MOSFET 1 (the pin label S1 is printed at package pin 5 in the top view).
6 D1 passive Drain of P-channel MOSFET 1, rated for -20 V drain-source and -4.0 A continuous at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V TA = 25 °C 1
Gate-Source Voltage VGS -12 12 V TA = 25 °C 1
Pulsed Drain Current IDM -12 A TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 93 110 °C/W t ≤ 5 s, surface mounted on 1" x 1" FR4 1
Maximum Junction-to-Foot RthJF 75 90 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS -20 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.5 -2 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±12 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = -20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = -20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -8 A VDS ≤ -5 V, VGS = -4.5 V 2
Total Gate Charge Qg 5.2 8 nC VDS = -10 V, VGS = -4.5 V, ID = -2.6 A 2
Gate Resistance Rg 2 7 14 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 39 59 ns VDD = -10 V, RL = 7.1 Ω, ID ≅ -2.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 25 38 ns VDD = -10 V, RL = 7.1 Ω, ID ≅ -2.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 13 20 ns VDD = -10 V, RL = 7.1 Ω, ID ≅ -2.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 9 18 ns VDD = -10 V, RL = 7.1 Ω, ID ≅ -2.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Body Diode Voltage VSD 0.85 1.2 V IS = -2.1 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 13 20 ns IF = -2.1 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Drain-Source On-State Resistance RDS(on) 0.075 Ω VGS = -4.5 V, ID = -2.5 A 2
Drain-Source On-State Resistance RDS(on) 0.1 Ω VGS = -2.5 V, ID = -1 A 2

CAD (KiCad official)

  • Symbol: AO6801-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: ao6801-vb-etched.step / ao6801-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao6801-vb.step / ao6801-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 bb288ed22d1c1aba, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF