# AO6601

**UMW** · MOSFETs · SOT-23-6

AO6601 from UMW, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET; gate-source voltage is rated ±12 V (VGS ±12 V, Absolute Maximum Ratings). |
| 2 | S2 | passive | Source of the P-channel MOSFET (Q2); the datasheet gives no pin-specific limit for this terminal, and the device is rated for VDS -30 V with ID -2.3 A continuous at TA=25°C. |
| 3 | G2 | input | Gate of the P-channel MOSFET; gate-source voltage is rated ±12 V (VGS ±12 V, Absolute Maximum Ratings). |
| 4 | D2 | passive | Drain of the P-channel MOSFET; rated VDS -30 V with ID -2.3 A continuous at TA=25°C. |
| 5 | S1 | passive | Source of the N-channel MOSFET (Q1); the datasheet gives no pin-specific limit for this terminal, and the device is rated for VDS 30 V with ID 3.4 A continuous at TA=25°C. |
| 6 | D1 | passive | Drain of the N-channel MOSFET; rated VDS 30 V with ID 3.4 A continuous at TA=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (N-ch) | BVDSS | 30 |  |  | V | ID=250µA, VGS=0V | 3 |
| Zero Gate Voltage Drain Current (N-ch) | IDSS |  |  | 1 | µA | VDS=30V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current (N-ch) | IDSS |  |  | 5 | µA | VDS=30V, VGS=0V, TJ=55°C | 3 |
| Gate-Body leakage current (N-ch) | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±12V | 3 |
| Gate Threshold Voltage (N-ch) | VGS(th) | 0.5 |  | 1.5 | V | VDS=VGS, ID=250μA | 3 |
| On state drain current (N-ch) | ID(ON) | 20 |  |  | A | VGS=10V, VDS=5V | 3 |
| Static Drain-Source On-Resistance (N-ch) | RDS(ON) |  | 46 | 60 | mΩ | VGS=10V, ID=3.4A | 3 |
| Static Drain-Source On-Resistance (N-ch) | RDS(ON) |  | 50 | 70 | mΩ | VGS=4.5V, ID=3A | 3 |
| Static Drain-Source On-Resistance (N-ch) | RDS(ON) |  | 62 | 90 | mΩ | VGS=2.5V, ID=2A | 3 |
| Drain-Source Breakdown Voltage (P-ch) | BVDSS | -30 |  |  | V | ID=-250µA, VGS=0V | 8 |
| Zero Gate Voltage Drain Current (P-ch) | IDSS |  |  | -1 | µA | VDS=-30V, VGS=0V | 8 |
| Gate-Body leakage current (P-ch) | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±12V | 8 |
| Gate Threshold Voltage (P-ch) | VGS(th) | -0.6 |  | -1.4 | V | VDS=VGS, ID=-250μA | 8 |
| On state drain current (P-ch) | ID(ON) | -15 |  |  | A | VGS=-10V, VDS=-5V | 8 |
| Static Drain-Source On-Resistance (P-ch) | RDS(ON) |  | 88 | 115 | mΩ | VGS=-10V, ID=-2.3A | 8 |
| Static Drain-Source On-Resistance (P-ch) | RDS(ON) |  | 103 | 150 | mΩ | VGS=-4.5V, ID=-2A | 8 |
| Static Drain-Source On-Resistance (P-ch) | RDS(ON) |  | 139 | 200 | mΩ | VGS=-2.5V, ID=-1A | 8 |
| Drain-Source Voltage (N-ch) | VDS |  |  | 30 | V |  | 1 |
| Drain-Source Voltage (P-ch) | VDS | -30 |  |  | V |  | 1 |
| Gate-Source Voltage (N-ch) | VGS | -12 |  | 12 | V |  | 1 |
| Gate-Source Voltage (P-ch) | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current (N-ch) | ID |  |  | 3.4 | A | TA=25°C | 1 |
| Continuous Drain Current (N-ch) | ID |  |  | 2.7 | A | TA=70°C | 1 |
| Continuous Drain Current (P-ch) | ID | -2.3 |  |  | A | TA=25°C | 1 |
| Continuous Drain Current (P-ch) | ID | -1.8 |  |  | A | TA=70°C | 1 |
| Pulsed Drain Current (N-ch) | IDM |  |  | 20 | A |  | 1 |
| Pulsed Drain Current (P-ch) | IDM | -15 |  |  | A |  | 1 |
| Power Dissipation (N-ch and P-ch) | PD |  |  | 1.15 | W | TA=25°C | 1 |
| Power Dissipation (N-ch and P-ch) | PD |  |  | 0.73 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range (N-ch and P-ch) | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA |  | 78 | 106 | °C/W | t ≤ 10s | 2 |
| Maximum Junction-to-Ambient (Steady-State) | RθJA |  | 110 | 150 | °C/W | Steady-State | 2 |
| Maximum Junction-to-Lead (Steady-State) | RθJL |  | 64 | 80 | °C/W | Steady-State | 2 |

## CAD (KiCad official)

- Symbol: `AO6601`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files: `ao6601-etched.step` / `ao6601-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao6601.step` / `ao6601.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755875644712865792) (15 pp, sha256 `45dccb713a69c7b4`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ao6601-datasheet.pdf)