component
AO6405
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownAO6405
Alpha Omega Semicon · MOSFETs · TSOP-6
AO6405 from Alpha Omega Semicon, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, internally common with pins 2, 5 and 6; VDS rated -30V. |
| 2 | D | passive | Drain, internally common with pins 1, 5 and 6; continuous drain current -5A at TA=25°C, pulsed -20A. |
| 3 | G | input | Gate; gate-source voltage limited to ±20V, with RDS(ON) below 52mΩ at VGS=-10V. |
| 4 | S | passive | Source of the P-channel MOSFET. |
| 5 | D | passive | Drain, internally common with pins 1, 2 and 6. |
| 6 | D | passive | Drain, internally common with pins 1, 2 and 5. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | ID=-250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (TJ=55°C) | IDSS | -5 | µA | VDS=-30V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.4 | -1.9 | -2.4 | V | VDS=VGS, ID=-250µA | 2 |
| On State Drain Current | ID(ON) | -20 | A | VGS=-10V, VDS=-5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 34 | 52 | mΩ | VGS=-10V, ID=-5A | 2 | |
| Static Drain-Source On-Resistance (TJ=125°C) | RDS(ON) | 52 | 70 | mΩ | VGS=-10V, ID=-5A, TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 54 | 87 | mΩ | VGS=-4.5V, ID=-4A | 2 | |
| Forward Transconductance | gFS | 10 | S | VDS=-5V, ID=-5A | 2 | ||
| Diode Forward Voltage | VSD | -0.7 | -1 | V | IS=-1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | -2.5 | A | 2 | |||
| Input Capacitance | Ciss | 520 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 100 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 65 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | ||
| Gate Resistance | Rg | 3.5 | 7.5 | 11.5 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg(10V) | 9.2 | 11 | nC | VGS=-10V, VDS=-15V, ID=-5A | 2 | |
| Total Gate Charge (4.5V) | Qg(4.5V) | 4.6 | 6 | nC | 2 | ||
| Gate Source Charge | Qgs | 1.6 | nC | 2 | |||
| Gate Drain Charge | Qgd | 2.2 | nC | 2 | |||
| Turn-On DelayTime | tD(on) | 7.5 | ns | VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 5.5 | ns | VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω | 2 | ||
| Turn-Off DelayTime | tD(off) | 19 | ns | VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 7 | ns | VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 11 | ns | IF=-5A, dI/dt=100A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 5.3 | nC | IF=-5A, dI/dt=100A/µs | 2 | ||
| Drain-Source Voltage | VDS | -30 | V | TA=25°C unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -5 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -4.2 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -20 | A | Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C | 1 | ||
| Power Dissipation | PD | 2 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 1.3 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA | 47.5 | 62.5 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient (Steady-State) | RθJA | 74 | 110 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Lead (Steady-State) | RθJL | 37 | 50 | °C/W | Steady-State | 1 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | Lead Frame Copper | 10 |
CAD (KiCad official)
- Symbol:
AO6405 - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
ao6405-etched.step/ao6405-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao6405.step/ao6405.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (11 pp, sha256
b2ef11651e89861b, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).