component
AO6403
Public Made by Adomby adom
Alpha & Omega Semicon MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO6403
Alpha & Omega Semicon · MOSFETs · TSOP-6
AO6403 from Alpha & Omega Semicon, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal of the -30V P-channel MOSFET, with Pin 1 marked on the top view. |
| 2 | D | passive | Drain terminal of the -30V P-channel MOSFET, rated for VDS = -30V. |
| 3 | G | input | Gate terminal of the MOSFET; the gate-source voltage is rated at ±20V. |
| 4 | S | passive | Source terminal of the MOSFET. |
| 5 | D | passive | Drain terminal of the -30V P-channel MOSFET, rated for VDS = -30V. |
| 6 | D | passive | Drain terminal of the -30V P-channel MOSFET, rated for VDS = -30V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -6 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -5 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -30 | A | 1 | |||
| Power Dissipation | PD | 1.3 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambian t≤10s | RθJA | 47.5 | 62.5 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient (Steady-State) | RθJA | 74 | 110 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Lead (Steady-State) | RθJL | 37 | 50 | °C/W | Steady-State | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | ID=-250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | TJ=55°C | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.3 | -1.85 | -2.4 | V | VDS=VGS, ID=-250µA | 2 |
| On State Drain Current | ID(ON) | -30 | A | VGS=-10V, VDS=-5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 22 | 35 | mΩ | VGS=-10V, ID=-6A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 32 | 39 | mΩ | TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 34 | 58 | mΩ | VGS=-4.5V, ID=-5A | 2 | |
| Diode Forward Voltage | VSD | -0.8 | -1 | V | IS=-1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | -2.5 | A | 2 | |||
| Gate Resistance | Rg | 1.5 | 3.2 | 5 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg (10V) | 13.6 | 16 | nC | VGS=-10V, VDS=-15V, ID=-6A | 2 | |
| Total Gate Charge (4.5V) | Qg (4.5V) | 6.7 | 8 | nC | VGS=-4.5V | 2 |
CAD (KiCad official)
- Symbol:
AO6403 - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
ao6403-etched.step/ao6403-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao6403.step/ao6403.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha & Omega Semicon datasheet (5 pp, sha256
fe5618c39334aa47, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).