# AO6400

**UMW** · MOSFETs · SOT-23-6

AO6400 from UMW, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | DRAIN of the 30V N-channel MOSFET; the datasheet rates VDS at 30 V and continuous drain current ID at 6.9 A (VGS=10V, TA=25°C). |
| 2 | D | passive | DRAIN of the 30V N-channel MOSFET; the datasheet rates VDS at 30 V and continuous drain current ID at 6.9 A (VGS=10V, TA=25°C). |
| 3 | G | input | GATE of the N-channel MOSFET; the datasheet rates the gate-source voltage VGS at ±12 V. |
| 4 | S | passive | SOURCE of the N-channel MOSFET; the datasheet gives no separate pin-level limit for this terminal. |
| 5 | D | passive | DRAIN of the 30V N-channel MOSFET; the datasheet rates VDS at 30 V and continuous drain current ID at 6.9 A (VGS=10V, TA=25°C). |
| 6 | D | passive | DRAIN of the 30V N-channel MOSFET; the datasheet rates VDS at 30 V and continuous drain current ID at 6.9 A (VGS=10V, TA=25°C). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current (TA=25°C) | ID |  |  | 6.9 | A | TA=25°C | 1 |
| Continuous Drain Current (TA=70°C) | ID |  |  | 5.8 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM |  |  | 35 | A |  | 1 |
| Power Dissipation (TA=25°C) | PD |  |  | 2 | W | TA=25°C | 1 |
| Power Dissipation (TA=70°C) | PD |  |  | 1.3 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | ID=250µA, VGS=0V | 2 |
| Gate-Body leakage current | IGSS |  |  | 100 | nA | VDS=0V, VGS=±12V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.65 | 1.05 | 1.45 | V | VDS=VGS, ID=250μA | 2 |
| On state drain current | ID(ON) | 35 |  |  | A | VGS=4.5V, VDS=5V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 28 | mΩ | VGS=10V, ID=6.9A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 33 | mΩ | VGS=4.5V, ID=6A | 2 |
| Diode Forward Voltage | VSD |  | 0.7 | 1 | V | IS=1A, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS=30V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current (TJ=55°C) | IDSS |  |  | 5 | µA | VDS=30V, VGS=0V, TJ=55°C | 2 |
| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA |  | 47.5 | 62.5 | °C/W | t ≤ 10s | 1 |
| Maximum Junction-to-Ambient (Steady-State) | RθJA |  | 74 | 110 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Lead | RθJL |  | 37 | 50 | °C/W | Steady-State | 1 |

## CAD (KiCad official)

- Symbol: `AO6400`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files: `ao6400-etched.step` / `ao6400-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao6400.step` / `ao6400.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755875509026590720) (9 pp, sha256 `829e7bf37ff2acbb`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ao6400-datasheet.pdf)