component
AO4892
Public Made by Adomby adom
Alpha & Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO4892
Alpha & Omega Semicon · MOSFETs · SOIC-8
AO4892 from Alpha & Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel). |
| 2 | G1 | input | Gate of MOSFET 1, rated ±20V maximum gate-source voltage. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel). |
| 4 | G2 | input | Gate of MOSFET 2, rated ±20V maximum gate-source voltage. |
| 5 | D2 | passive | Drain of MOSFET 2, rated 100V maximum drain-source voltage. |
| 6 | D2 | passive | Drain of MOSFET 2, rated 100V maximum drain-source voltage (tied to pin 5). |
| 7 | D1 | passive | Drain of MOSFET 1, rated 100V maximum drain-source voltage. |
| 8 | D1 | passive | Drain of MOSFET 1, rated 100V maximum drain-source voltage (tied to pin 7). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | SOIC-8 |
| Category | Transistors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | TA=25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 4 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 3 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 25 | A | 1 | |||
| Avalanche Current | IAS | 4 | A | 1 | |||
| Avalanche energy | EAS | 0.8 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 2 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 1.3 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 48 | 62.5 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient | RθJA | 74 | 90 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Lead | RθJL | 32 | 40 | °C/W | Steady-State | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | ID=250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=100V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | VDS=100V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.7 | 2.35 | 2.8 | V | VDS=VGS, ID=250µA | 2 |
| On state drain current | ID(ON) | 25 | A | VGS=10V, VDS=5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 56 | 68 | mΩ | VGS=10V, ID=4A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 104 | 126 | mΩ | VGS=10V, ID=4A, TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 74 | 94 | mΩ | VGS=4.5V, ID=3A | 2 | |
| Maximum Body-Diode Continuous Current | IS | 2.5 | A | 2 | |||
| Diode Forward Voltage | VSD | 0.78 | 1 | V | IS=1A, VGS=0V | 2 | |
| Gate resistance | Rg | 0.7 | 1.4 | 2.1 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg | 6.5 | 12 | nC | VGS=10V, VDS=50V, ID=4A | 2 | |
| Total Gate Charge (4.5V) | Qg | 3 | 6 | nC | VGS=10V, VDS=50V, ID=4A | 2 | |
| Forward Transconductance | gFS | 12.5 | S | VDS=5V, ID=4A | 2 | ||
| Input Capacitance | Ciss | 415 | pF | VGS=0V, VDS=50V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 32 | pF | VGS=0V, VDS=50V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 3 | pF | VGS=0V, VDS=50V, f=1MHz | 2 | ||
| Gate Source Charge | Qgs | 1.5 | nC | VGS=10V, VDS=50V, ID=4A | 2 | ||
| Gate Drain Charge | Qgd | 1.5 | nC | VGS=10V, VDS=50V, ID=4A | 2 | ||
| Turn-On DelayTime | tD(on) | 4 | ns | VGS=10V, VDS=50V, RL=12.5Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 2 | ns | VGS=10V, VDS=50V, RL=12.5Ω, RGEN=3Ω | 2 | ||
| Turn-Off DelayTime | tD(off) | 15 | ns | VGS=10V, VDS=50V, RL=12.5Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 2 | ns | VGS=10V, VDS=50V, RL=12.5Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 16 | ns | IF=4A, dI/dt=500A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 44 | nC | IF=4A, dI/dt=500A/µs | 2 |
CAD (KiCad official)
- Symbol:
AO4892 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
ao4892-etched.step/ao4892-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4892.step/ao4892.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha & Omega Semicon datasheet (6 pp, sha256
20d6bf30e8695436, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).