component
AO4884-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownAO4884-HXY
HXY MOSFET · MOSFETs · SOP-8
AO4884-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N-channel MOSFET 1; VDS rated 40V and continuous ID 12A per datasheet. |
| 2 | G1 | input | Gate of N-channel MOSFET 1; VGS maximum ±20V, usable with gate voltages as low as 2.5V. |
| 3 | S2 | passive | Source of N-channel MOSFET 2; VDS rated 40V and continuous ID 12A per datasheet. |
| 4 | G2 | input | Gate of N-channel MOSFET 2; VGS maximum ±20V, usable with gate voltages as low as 2.5V. |
| 5 | D2 | passive | Drain of N-channel MOSFET 2 (pins 5 and 6 are tied together); VDS rated 40V. |
| 6 | D2 | passive | Drain of N-channel MOSFET 2 (pins 5 and 6 are tied together); VDS rated 40V. |
| 7 | D1 | passive | Drain of N-channel MOSFET 1 (pins 7 and 8 are tied together); VDS rated 40V. |
| 8 | D1 | passive | Drain of N-channel MOSFET 1 (pins 7 and 8 are tied together); VDS rated 40V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | Tj=25°C | 1 | ||
| Gate-Source Voltage | VGS | 20 | V | Tj=25°C, printed +20 | 1 | ||
| Drain Current | ID | 12 | A | TA=25°C, VGS @ 4.5V | 1 | ||
| Drain Current | ID | 7 | A | TA=70°C, VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | 1 | |||
| Total Power Dissipation | PD | 2.9 | W | TA=25°C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 65 | °C/W | SOIC-8 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 16 | 20 | mΩ | VGS=10V, ID=8A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 18.9 | 24 | mΩ | VGS=4.5V, ID=4A | 2 | |
| Forward Transconductance | gFS | 33 | S | VDS=5V,ID=8A | 2 | ||
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS=0V,IS=9A | 2 |
CAD (KiCad official)
- Symbol:
AO4884-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4884-hxy-etched.step/ao4884-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4884-hxy.step/ao4884-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
3e5e67ad0947247b, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).