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AO4842

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Alpha Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ao4842-etched.step ao4842: factory component page (tier=lcsc) · Ray 19d ago
ao4842-hero.glb ao4842: hero GLB from the etched model (keeps the MPN mark) · Ray 19d ago
ao4842-hero.overlay.json Publish 0.1.0 · Ray 19d ago
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ao4842.lbr Publish 0.1.0 · Ray 19d ago
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package.json Publish 0.1.0 · Ray 19d ago
page.json ao4842: specified limits as data (metadata.characteristics, 37 rows from the datasheet) · Ray 17d ago
README.md ao4842: specified limits as data (metadata.characteristics, 37 rows from the datasheet) · Ray 17d ago

AO4842

Alpha Omega Semicon · MOSFETs · SOIC-8

AO4842 from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of MOSFET 1, rated with the 30V drain-source voltage (VDS) and ±20V gate-source voltage limits in the absolute maximum ratings.
2 G1 input Gate of MOSFET 1; the datasheet specifies a gate-source voltage limit of ±20V.
3 S2 passive Source terminal of MOSFET 2, rated with the 30V drain-source voltage (VDS) and ±20V gate-source voltage limits in the absolute maximum ratings.
4 G2 input Gate of MOSFET 2; the datasheet specifies a gate-source voltage limit of ±20V.
5 D2 passive Drain of MOSFET 2, rated for 30V drain-source voltage per the absolute maximum ratings.
6 D2 passive Drain of MOSFET 2 (internally common with pin 5), rated for 30V drain-source voltage per the absolute maximum ratings.
7 D1 passive Drain of MOSFET 1 (internally common with pin 8), rated for 30V drain-source voltage per the absolute maximum ratings.
8 D1 passive Drain of MOSFET 1, rated for 30V drain-source voltage per the absolute maximum ratings.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V ID=250µA, VGS=0V 2
On state drain current ID(ON) 64 A VGS=4.5V, VDS=5V 2
Zero Gate Voltage Drain Current IDSS 0.004 1 µA VDS=30V, VGS=0V 2
Zero Gate Voltage Drain Current (TJ=55°C) IDSS 5 µA VDS=30V, VGS=0V, TJ=55°C 2
Gate-Body leakage current IGSS 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1.5 2.1 2.6 V VDS=VGS, ID=250µA 2
Static Drain-Source On-Resistance RDS(ON) 16.8 21 mΩ VGS=10V, ID=7.7A 2
Static Drain-Source On-Resistance (TJ=125°C) RDS(ON) 24 29 mΩ TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 23.4 30 mΩ VGS=4.5V, ID=5A 2
Forward Transconductance gFS 20 S VDS=5V, ID=7.7A 2
Diode Forward Voltage VSD 0.75 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 2.4 A 2
Input Capacitance Ciss 373 448 pF VGS=0V, VDS=15V, f=1MHz 2
Output Capacitance Coss 67 pF VGS=0V, VDS=15V, f=1MHz 2
Reverse Transfer Capacitance Crss 41 pF VGS=0V, VDS=15V, f=1MHz 2
Gate resistance Rg 1.8 2.8 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge (10V) Qg 7.2 11 nC VGS=10V, VDS=15V, ID=7.7A 2
Total Gate Charge (4.5V) Qg 3.5 nC 2
Gate Source Charge Qgs 1.3 nC VGS=10V, VDS=15V, ID=7.7A 2
Gate Drain Charge Qgd 1.7 nC VGS=10V, VDS=15V, ID=7.7A 2
Turn-On DelayTime tD(on) 4.5 ns VGS=10V, VDS=15V, RL=1.95Ω, RGEN=3Ω 2
Turn-On Rise Time tr 2.7 ns VGS=10V, VDS=15V, RL=1.95Ω, RGEN=3Ω 2
Turn-Off DelayTime tD(off) 14.9 ns VGS=10V, VDS=15V, RL=1.95Ω, RGEN=3Ω 2
Turn-Off Fall Time tf 2.9 ns VGS=10V, VDS=15V, RL=1.95Ω, RGEN=3Ω 2
Body Diode Reverse Recovery Time trr 10.5 12.6 ns IF=7.7A, dI/dt=100A/µs 2
Body Diode Reverse Recovery Charge Qrr 4.5 nC IF=7.7A, dI/dt=100A/µs 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 7.7 A TA=25°C 1
Continuous Drain Current ID 6.5 A TA=70°C 1
Pulsed Drain Current IDM 64 A 1
Power Dissipation PD 2 W TA=25°C 1
Power Dissipation PD 1.44 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient (t ≤ 10s) RθJA 50 62.5 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient (Steady-State) RθJA 82 110 °C/W Steady-State 1
Maximum Junction-to-Lead (Steady-State) RθJL 41 50 °C/W Steady-State 1

CAD (KiCad official)

  • Symbol: AO4842
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ao4842-etched.step / ao4842-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4842.step / ao4842.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (4 pp, sha256 9cae02887f84cbb7, retrieved 2026-10-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF