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AO4842-MS

Public Made by Adom

by adom

MSKSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AO4842-MS

MSKSEMI · MOSFETs · SOP-8

AO4842-MS from MSKSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of MOSFET 1 (dual N-channel); the datasheet gives no pin-specific voltage or current limit beyond the device absolute maximum ratings.
2 G1 input Gate terminal of MOSFET 1; gate-source voltage is rated at ±20 V per the absolute maximum ratings.
3 S2 passive Source terminal of MOSFET 2 (dual N-channel); the datasheet gives no pin-specific voltage or current limit beyond the device absolute maximum ratings.
4 G2 input Gate terminal of MOSFET 2; gate-source voltage is rated at ±20 V per the absolute maximum ratings.
5 D2 passive Drain terminal of MOSFET 2; drain-source voltage is rated at 30 V per the absolute maximum ratings.
6 D2 passive Drain terminal of MOSFET 2; drain-source voltage is rated at 30 V per the absolute maximum ratings.
7 D1 passive Drain terminal of MOSFET 1; drain-source voltage is rated at 30 V per the absolute maximum ratings.
8 D1 passive Drain terminal of MOSFET 1; drain-source voltage is rated at 30 V per the absolute maximum ratings.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 3
Static Drain-Source On-Resistance RDS(ON) 17 19 mΩ VGS=10V, ID=7A 3
Static Drain-Source On-Resistance RDS(ON) 22 28 mΩ VGS=4.5V, ID=4A 3
Gate Threshold Voltage VGS(th) 1.2 2.5 V VGS=VDS, ID=250uA 3
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 3
Drain-Source Leakage Current IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 3
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 3
Continuous Source Current IS 7.3 A VG=VD=0V, Force Current 3
Pulsed Source Current ISM 37 A 3
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 3
Drain-Source Voltage VDS 30 V 2
Gate-Source Voltage VGS 20 V 2
Drain Current ID@TA=25℃ 8.5 A VGS @ 4.5V, TA=25℃ 2
Drain Current ID@TA=70℃ 5.8 A VGS @ 4.5V, TA=70℃ 2
Pulsed Drain Current IDM 37 A 2
Total Power Dissipation PD@TA=25℃ 1.5 W TA=25℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Maximum Thermal Resistance, Junction-ambient Rthj-a 85 ℃/W 2

CAD (KiCad official)

  • Symbol: AO4842-MS
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ao4842-ms-etched.step / ao4842-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4842-ms.step / ao4842-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (7 pp, sha256 8b19d5993153bced, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF