component
AO4842-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AO4842-HXY
HXY MOSFET · MOSFETs · SOP-8
AO4842-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N-channel MOSFET 1; the datasheet rates VDS at 30V and ID at 8A at TA=25°C for each channel. |
| 2 | G1 | input | Gate of N-channel MOSFET 1; the absolute maximum VGS is ±20V, and the device operates with gate voltages as low as 2.5V. |
| 3 | S2 | passive | Source of N-channel MOSFET 2; the datasheet rates VDS at 30V and ID at 8A at TA=25°C for each channel. |
| 4 | G2 | input | Gate of N-channel MOSFET 2; the absolute maximum VGS is ±20V, and the device operates with gate voltages as low as 2.5V. |
| 5 | D2 | passive | Drain of N-channel MOSFET 2; the datasheet rates VDS at 30V, with RDS(ON) below 19mΩ at VGS=4.5V. |
| 6 | D2 | passive | Drain of N-channel MOSFET 2 (second drain pin, tied to the same drain); the datasheet rates VDS at 30V, with RDS(ON) below 19mΩ at VGS=4.5V. |
| 7 | D1 | passive | Drain of N-channel MOSFET 1; the datasheet rates VDS at 30V, with RDS(ON) below 19mΩ at VGS=4.5V. |
| 8 | D1 | passive | Drain of N-channel MOSFET 1 (second drain pin, tied to the same drain); the datasheet rates VDS at 30V, with RDS(ON) below 19mΩ at VGS=4.5V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 17 | 19 | mΩ | VGS=10V, ID=7A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 22 | 28 | mΩ | VGS=4.5V, ID=4A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 2.5 | V | VGS=VDS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 7.3 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 37 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 30 | V | Tj=25°C | 1 | ||
| Gate-Source Voltage | VGS | 20 | V | Tj=25°C; printed +20 | 1 | ||
| Drain Current | ID | 8 | A | TA=25℃, VGS @ 4.5V | 1 | ||
| Drain Current | ID | 5.8 | A | TA=70℃, VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 37 | A | 1 | |||
| Total Power Dissipation | PD | 1.5 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 85 | ℃/W | 1 | |||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.034 | V/℃ | Reference to 25℃, ID=1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | -5.8 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 6 | S | VDS=5V, ID=7A | 2 | ||
| Gate Resistance | Rg | 2.5 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge (4.5V) | Qg | 6 | nC | VDS=15V, VGS=4.5V, ID=7A | 2 | ||
| Input Capacitance | Ciss | 572 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Recovery Time | trr | 20 | nS | IF=7A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 1.1 | nC | IF=7A, dI/dt=100A/µs, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
AO4842-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4842-hxy-etched.step/ao4842-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4842-hxy.step/ao4842-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
37bbdb8b744c505a, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AO4842-HXY
**HXY MOSFET** · MOSFETs · SOP-8
AO4842-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N-channel MOSFET 1; the datasheet rates VDS at 30V and ID at 8A at TA=25°C for each channel. |
| 2 | G1 | input | Gate of N-channel MOSFET 1; the absolute maximum VGS is ±20V, and the device operates with gate voltages as low as 2.5V. |
| 3 | S2 | passive | Source of N-channel MOSFET 2; the datasheet rates VDS at 30V and ID at 8A at TA=25°C for each channel. |
| 4 | G2 | input | Gate of N-channel MOSFET 2; the absolute maximum VGS is ±20V, and the device operates with gate voltages as low as 2.5V. |
| 5 | D2 | passive | Drain of N-channel MOSFET 2; the datasheet rates VDS at 30V, with RDS(ON) below 19mΩ at VGS=4.5V. |
| 6 | D2 | passive | Drain of N-channel MOSFET 2 (second drain pin, tied to the same drain); the datasheet rates VDS at 30V, with RDS(ON) below 19mΩ at VGS=4.5V. |
| 7 | D1 | passive | Drain of N-channel MOSFET 1; the datasheet rates VDS at 30V, with RDS(ON) below 19mΩ at VGS=4.5V. |
| 8 | D1 | passive | Drain of N-channel MOSFET 1 (second drain pin, tied to the same drain); the datasheet rates VDS at 30V, with RDS(ON) below 19mΩ at VGS=4.5V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 17 | 19 | mΩ | VGS=10V, ID=7A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 22 | 28 | mΩ | VGS=4.5V, ID=4A | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS | | | 7.3 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | 37 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | | | 30 | V | Tj=25°C | 1 |
| Gate-Source Voltage | VGS | | | 20 | V | Tj=25°C; printed +20 | 1 |
| Drain Current | ID | | | 8 | A | TA=25℃, VGS @ 4.5V | 1 |
| Drain Current | ID | | | 5.8 | A | TA=70℃, VGS @ 4.5V | 1 |
| Pulsed Drain Current | IDM | | | 37 | A | | 1 |
| Total Power Dissipation | PD | | | 1.5 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | | | 85 | ℃/W | | 1 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ | | 0.034 | | V/℃ | Reference to 25℃, ID=1mA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) | | -5.8 | | mV/℃ | | 2 |
| Forward Transconductance | gfs | | 6 | | S | VDS=5V, ID=7A | 2 |
| Gate Resistance | Rg | | 2.5 | | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge (4.5V) | Qg | | 6 | | nC | VDS=15V, VGS=4.5V, ID=7A | 2 |
| Input Capacitance | Ciss | | 572 | | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Reverse Recovery Time | trr | | 20 | | nS | IF=7A, dI/dt=100A/µs, TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr | | 1.1 | | nC | IF=7A, dI/dt=100A/µs, TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `AO4842-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `ao4842-hxy-etched.step` / `ao4842-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao4842-hxy.step` / `ao4842-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/ao4842-hxy-datasheet.pdf) (6 pp, sha256 `37bbdb8b744c505a`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ao4842-hxy-datasheet.pdf)