# AO4838

**Alpha Omega Semicon** · MOSFETs · SOIC-8

AO4838 from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; the gate-source voltage is limited to ±20 V per the absolute maximum ratings. |
| 2 | G1 | input | Gate of MOSFET 1; VGS is limited to ±20 V per the absolute maximum ratings. |
| 3 | S2 | passive | Source of MOSFET 2; the gate-source voltage is limited to ±20 V per the absolute maximum ratings. |
| 4 | G2 | input | Gate of MOSFET 2; VGS is limited to ±20 V per the absolute maximum ratings. |
| 5 | D2 | passive | Drain of MOSFET 2; drain-source voltage is rated 30 V maximum per the absolute maximum ratings. |
| 6 | D2 | passive | Drain of MOSFET 2 (internally tied to pin 5); drain-source voltage is rated 30 V maximum per the absolute maximum ratings. |
| 7 | D1 | passive | Drain of MOSFET 1 (internally tied to pin 8); drain-source voltage is rated 30 V maximum per the absolute maximum ratings. |
| 8 | D1 | passive | Drain of MOSFET 1; drain-source voltage is rated 30 V maximum per the absolute maximum ratings. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | ID=250µA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS=30V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 5 | µA | VDS=30V, VGS=0V, TJ=55°C | 2 |
| Gate-Body leakage current | IGSS |  |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.5 | 2 | 2.6 | V | VDS=VGS ID=250µA | 2 |
| On state drain current | ID(ON) | 60 |  |  | A | VGS=10V, VDS=5V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 8 | 9.6 | mΩ | VGS=10V, ID=11A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 11.5 | 14 | mΩ | TJ=125°C, VGS=10V, ID=11A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 10.4 | 13 | mΩ | VGS=4.5V, ID=10A | 2 |
| Forward Transconductance | gFS | 50 |  |  | S | VDS=5V, ID=11A | 2 |
| Diode Forward Voltage | VSD |  | 0.7 | 1 | V | IS=1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 2.5 | A |  | 2 |
| Input Capacitance | Ciss | 860 | 1080 | 1300 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Output Capacitance | Coss | 125 | 180 | 240 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | 65 | 110 | 160 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Gate resistance | Rg | 0.5 | 1 | 1.5 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg | 14 | 18 | 22 | nC | VGS=10V, VDS=15V, ID=11A | 2 |
| Total Gate Charge (4.5V) | Qg | 6.4 | 8 | 9.6 | nC |  | 2 |
| Body Diode Reverse Recovery Charge | Qrr | 10 | 13 | 16 | nC | IF=11A, dI/dt=500A/µs | 2 |
| Body Diode Reverse Recovery Time | trr | 7 | 8.5 | 10 | ns | IF=11A, dI/dt=500A/µs | 2 |
| Gate Source Charge | Qgs |  | 3.4 |  | nC |  | 2 |
| Gate Drain Charge | Qgd |  | 3 |  | nC |  | 2 |
| Turn-On DelayTime | tD(on) |  | 6 |  | ns | VGS=10V, VDS=15V, RL=1.35Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr |  | 3 |  | ns | VGS=10V, VDS=15V, RL=1.35Ω, RGEN=3Ω | 2 |
| Turn-Off DelayTime | tD(off) |  | 21 |  | ns | VGS=10V, VDS=15V, RL=1.35Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf |  | 3 |  | ns | VGS=10V, VDS=15V, RL=1.35Ω, RGEN=3Ω | 2 |
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 11 | A | TA=25°C | 1 |
| Continuous Drain Current | ID |  |  | 9 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM |  |  | 60 | A |  | 1 |
| Avalanche Current | IAS, IAR |  |  | 30 | A |  | 1 |
| Avalanche energy | EAS, EAR |  |  | 45 | mJ | L=0.1mH | 1 |
| Power Dissipation | PD |  |  | 2 | W | TA=25°C | 1 |
| Power Dissipation | PD |  |  | 1.3 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient thermal resistance | RθJA |  |  | 90 | °C/W |  | 5 |

## CAD (KiCad official)

- Symbol: `AO4838`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `ao4838-etched.step` / `ao4838-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao4838.step` / `ao4838.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha Omega Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588919470153224192) (6 pp, sha256 `2f6b5c7a702935ca`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ao4838-datasheet.pdf)