component
AO4832
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| ao4832-etched.glb | 16d ago |
| ao4832-etched.step | 16d ago |
| ao4832-hero.glb | 16d ago |
| ao4832-hero.overlay.json | 16d ago |
| ao4832.glb | 16d ago |
| ao4832.kicad_mod | 16d ago |
| ao4832.kicad_sym | 16d ago |
| ao4832.lbr | 16d ago |
| ao4832.step | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
AO4832
UMW · MOSFETs · SOP-8
AO4832 from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | SOURCE terminal of N-channel MOSFET 1; the pinning table lists pins 1 and 3 as SOURCE (S1, S2), and the absolute maximum VGS is ±20V. |
| 2 | G1 | input | GATE of N-channel MOSFET 1; gate-source voltage is rated ±20V absolute maximum. |
| 3 | S2 | passive | SOURCE terminal of N-channel MOSFET 2; the pinning table lists pins 1 and 3 as SOURCE (S1, S2), and the absolute maximum VGS is ±20V. |
| 4 | G2 | input | GATE of N-channel MOSFET 2; gate-source voltage is rated ±20V absolute maximum. |
| 5 | D1 | passive | DRAIN terminal of the dual MOSFET (D1, D2); drain-source voltage is rated 30V. |
| 6 | D1 | passive | DRAIN terminal of the dual MOSFET (D1, D2); drain-source voltage is rated 30V. |
| 7 | D2 | passive | DRAIN terminal of the dual MOSFET (D1, D2); drain-source voltage is rated 30V. |
| 8 | D2 | passive | DRAIN terminal of the dual MOSFET (D1, D2); drain-source voltage is rated 30V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=250µA, VGS=0V | 3 | ||
| Gate-Body leakage current | IGSS | 100 | nA | VDS=0V, VGS=±20V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 1.5 | 1.9 | 2.5 | V | VDS=VGS, ID=250μA | 3 |
| On state drain current | ID(ON) | 55 | A | VGS=10V, VDS=5V | 3 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 10.8 | 13 | mΩ | VGS=10V, ID=10A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 14 | 17.5 | mΩ | VGS=4.5V, ID=8A | 3 | |
| Forward Transconductance | gFS | 43 | S | VDS=5V, ID=10A | 3 | ||
| Diode Forward Voltage | VSD | 0.75 | 1 | V | IS=1A, VGS=0V | 3 | |
| Maximum Body-Diode Continuous Current | IS | 2.5 | A | 3 | |||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=30V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | VDS=30V, VGS=0V, TJ=55°C | 3 | ||
| Input Capacitance | Ciss | 610 | 760 | 910 | pF | VGS=0V, VDS=15V, f=1MHz | 3 |
| Output Capacitance | Coss | 88 | 125 | 160 | pF | VGS=0V, VDS=15V, f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | 40 | 70 | 100 | pF | VGS=0V, VDS=15V, f=1MHz | 3 |
| Gate resistance | Rg | 0.8 | 1.6 | 2.4 | Ω | VGS=0V, VDS=0V, f=1MHz | 3 |
| Total Gate Charge | Qg(10V) | 11 | 14 | 17 | nC | VGS=10V, VDS=15V, ID=10A | 3 |
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 10 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 8 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 55 | A | 1 | |||
| Avalanche Current | IAS, IAR | 22 | A | 1 | |||
| Avalanche energy | EAS, EAR | 24 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 2 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 1.3 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 48 | 62.5 | °C/W | t ≤ 10s | 2 | |
| Maximum Junction-to-Ambient | RθJA | 74 | 90 | °C/W | Steady-State | 2 | |
| Maximum Junction-to-Lead | RθJL | 32 | 40 | °C/W | Steady-State | 2 |
CAD (KiCad official)
- Symbol:
AO4832 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4832-etched.step/ao4832-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4832.step/ao4832.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (11 pp, sha256
0a57e5ef67d450a6, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).