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Contents

README

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AO4832-MS

MSKSEMI · MOSFETs · SOP-8

AO4832-MS from MSKSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1, with VDS rated 30V and continuous drain current up to 10A (TC=25℃).
2 G1 input Gate of N-channel MOSFET 1, with gate-source voltage rated ±20V and threshold VGS(th) of 1.2V min to 2.5V max.
3 S2 passive Source of N-channel MOSFET 2, with VDS rated 30V and continuous drain current up to 10A (TC=25℃).
4 G2 input Gate of N-channel MOSFET 2, with gate-source voltage rated ±20V and threshold VGS(th) of 1.2V min to 2.5V max.
5 D2 passive Drain of N-channel MOSFET 2, with drain-source voltage rated 30V and pulsed drain current up to 40A.
6 D2 passive Drain of N-channel MOSFET 2, with drain-source voltage rated 30V and pulsed drain current up to 40A.
7 D1 passive Drain of N-channel MOSFET 1, with drain-source voltage rated 30V and pulsed drain current up to 40A.
8 D1 passive Drain of N-channel MOSFET 1, with drain-source voltage rated 30V and pulsed drain current up to 40A.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 2
Gate-Source Voltage VGS -20 20 V 2
Drain Current - Continuous ID 10 A TC=25℃ 2
Drain Current - Continuous ID 6.3 A TC=100℃ 2
Drain Current - Pulsed IDM 40 A 2
Power Dissipation PD 2.1 W TC=25℃ 2
Power Dissipation - Derate above 25℃ PD 0.017 W/℃ Derate above 25℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Thermal Resistance Junction to ambient RθJA 60 ℃/W 2
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 3
Drain-Source Leakage Current IDSS 1 uA VDS=30V, VGS=0V, TJ=25℃ 3
Drain-Source Leakage Current IDSS 10 uA VDS=30V, VGS=0V, TJ=125℃ 3
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 3
Static Drain-Source On-Resistance RDS(ON) 10 13 mΩ VGS=10V, ID=8A 3
Static Drain-Source On-Resistance RDS(ON) 15 20 mΩ VGS=4.5V, ID=4A 3
Gate Threshold Voltage VGS(th) 1.2 1.6 2.5 V VGS=VDS, ID=250uA 3
Continuous Source Current IS 10 A VG=VD=0V, Force Current 3
Pulsed Source Current ISM 20 A 3
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 3

CAD (KiCad official)

  • Symbol: AO4832-MS
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ao4832-ms-etched.step / ao4832-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4832-ms.step / ao4832-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (7 pp, sha256 dfb950b792e99cbe, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF