component
AO4832-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 4d ago |
| viewers | 4d ago |
| ao4832-hxy-etched.glb | 4d ago |
| ao4832-hxy-etched.step | 4d ago |
| ao4832-hxy-hero.glb | 4d ago |
| ao4832-hxy-hero.overlay.json | 4d ago |
| ao4832-hxy.glb | 4d ago |
| ao4832-hxy.kicad_mod | 4d ago |
| ao4832-hxy.kicad_sym | 4d ago |
| ao4832-hxy.lbr | 4d ago |
| ao4832-hxy.step | 4d ago |
| package.json | 4d ago |
| page.json | 4d ago |
| README.md | 4d ago |
| verification.json | 4d ago |
AO4832-HXY
HXY MOSFET · MOSFETs · SOP-8
AO4832-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of N-channel MOSFET channel 1; the datasheet gives no pin-specific limit, and the device drain-source voltage is rated VDS = 30 V. |
| 2 | G1 | input | Gate of N-channel MOSFET channel 1; gate-source voltage is rated VGS = ±20 V, and the part is specified for gate drive down to 2.5 V. |
| 3 | S2 | passive | Source terminal of N-channel MOSFET channel 2; the datasheet gives no pin-specific limit, and the device drain-source voltage is rated VDS = 30 V. |
| 4 | G2 | input | Gate of N-channel MOSFET channel 2; gate-source voltage is rated VGS = ±20 V, and the part is specified for gate drive down to 2.5 V. |
| 5 | D2 | passive | Drain terminal of N-channel MOSFET channel 2; drain-source voltage is rated VDS = 30 V and continuous drain current ID = 11.5 A at TA = 25°C. |
| 6 | D2 | passive | Drain terminal of N-channel MOSFET channel 2; drain-source voltage is rated VDS = 30 V and continuous drain current ID = 11.5 A at TA = 25°C. |
| 7 | D1 | passive | Drain terminal of N-channel MOSFET channel 1; drain-source voltage is rated VDS = 30 V and continuous drain current ID = 11.5 A at TA = 25°C. |
| 8 | D1 | passive | Drain terminal of N-channel MOSFET channel 1; drain-source voltage is rated VDS = 30 V and continuous drain current ID = 11.5 A at TA = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Drain Current | ID@TA=25℃ | 11.5 | A | VGS @ 4.5V | 1 | ||
| Drain Current | ID@TA=70℃ | 7.8 | A | VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 42 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 3.2 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 62.5 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 10 | 13 | mΩ | VGS=10V, ID=10A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 16 | 22.5 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 11.5 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 72 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=18A | 2 |
CAD (KiCad official)
- Symbol:
AO4832-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4832-hxy-etched.step/ao4832-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4832-hxy.step/ao4832-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
a8bf821afb09fdbf, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).