# AO4828

**UMW** · MOSFETs · SOP-8

AO4828 from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the first N-channel MOSFET; rated with VDS up to 60V and VGS limited to ±20V. |
| 2 | G1 | input | Gate terminal of the first N-channel MOSFET; VGS is limited to ±20V and threshold is 1.5 to 2.5V, with operation down to 2.5V gate drive. |
| 3 | S2 | passive | Source terminal of the second N-channel MOSFET; rated with VDS up to 60V and VGS limited to ±20V. |
| 4 | G2 | input | Gate terminal of the second N-channel MOSFET; VGS is limited to ±20V and threshold is 1.5 to 2.5V, with operation down to 2.5V gate drive. |
| 5 | D2 | passive | Drain terminal of the second N-channel MOSFET; VDS is rated up to 60V with continuous drain current of 6.5A at VGS=10V. |
| 6 | D2 | passive | Drain terminal of the second N-channel MOSFET; VDS is rated up to 60V with continuous drain current of 6.5A at VGS=10V. |
| 7 | D1 | passive | Drain terminal of the first N-channel MOSFET; VDS is rated up to 60V with continuous drain current of 6.5A at VGS=10V. |
| 8 | D1 | passive | Drain terminal of the first N-channel MOSFET; VDS is rated up to 60V with continuous drain current of 6.5A at VGS=10V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 6.5 | A | TA=25°C | 1 |
| Continuous Drain Current | ID |  |  | 5 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM |  |  | 30 | A |  | 1 |
| Total Power Dissipation | PD |  |  | 2.1 | W | TA=25°C | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 1 |
| Temperature Range (Junction) | TJ | -55 |  | 150 | °C |  | 1 |
| Maximum Thermal Resistance, Junction ambient | RthJA |  |  | 60 | °C/W |  | 1 |
| Drain-source breakdown voltage | BVDSS | 60 |  |  | V | VGS=0V, ID=250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS=60V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250µA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  |  | 36 | mΩ | VGS=10V, ID=6A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  |  | 47 | mΩ | VGS=4.5V, ID=4A | 2 |

## CAD (KiCad official)

- Symbol: `AO4828`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `ao4828-etched.step` / `ao4828-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao4828.step` / `ao4828.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755875209863663616) (9 pp, sha256 `5aebabc7f6146333`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ao4828-datasheet.pdf)