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Ray ao4828-ms: specified limits as data (metadata.characteristics, 17 rows from the datasheet) fc12b42 17d ago

AO4828-MS

MSKSEMI · MOSFETs · SOP-8

AO4828-MS from MSKSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of the N-channel MOSFET 1; the absolute maximum rating limits VDS to 60 V and VGS to ±20 V.
2 G1 input Gate of the N-channel MOSFET 1; gate-source voltage is limited to ±20 V.
3 S2 passive Source terminal of the N-channel MOSFET 2; the absolute maximum rating limits VDS to 60 V and VGS to ±20 V.
4 G2 input Gate of the N-channel MOSFET 2; gate-source voltage is limited to ±20 V.
5 D2 passive Drain terminal of the N-channel MOSFET 2; continuous drain current is rated 6.5 A at TA=25℃ with a 60 V drain-source voltage limit.
6 D2 passive Drain terminal of the N-channel MOSFET 2 (second drain pin of the same channel); continuous drain current is rated 6.5 A with a 60 V drain-source voltage limit.
7 D1 passive Drain terminal of the N-channel MOSFET 1; continuous drain current is rated 6.5 A at TA=25℃ with a 60 V drain-source voltage limit.
8 D1 passive Drain terminal of the N-channel MOSFET 1 (second drain pin of the same channel); continuous drain current is rated 6.5 A with a 60 V drain-source voltage limit.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 2
Gate-Source Voltage VGS -20 20 V 2
Drain Current-Continuous ID 6.5 A 2
Drain Current-Continuous ID(100℃) 5 A TC=100℃ 2
Pulsed Drain Current IDM 30 A 2
Maximum Power Dissipation PD 2.1 W 2
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 2
Thermal Resistance, Junction-to-Ambient RθJA 60 ℃/W Surface mounted on FR4 Board, t ≤ 10 sec (Note 2) 2
Drain-Source Breakdown Voltage BVDSS 60 69 V VGS=0V ID=250μA 3
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 3
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 3
Gate Threshold Voltage VGS(th) 1 1.4 2 V VDS=VGS,ID=250μA 3
Drain-Source On-State Resistance RDS(ON) 30 36 mΩ VGS=10V, ID=6A 3
Drain-Source On-State Resistance RDS(ON) 34 48 mΩ VGS=4.5V, ID=4A 3
Forward Transconductance gFS 20 S VDS=5V,ID=6A 3
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=6A 3
Diode Forward Current IS 7 A Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2) 3

CAD (KiCad official)

  • Symbol: AO4828-MS
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ao4828-ms-etched.step / ao4828-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4828-ms.step / ao4828-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (8 pp, sha256 23ddc5ae8d69080b, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF