component
AO4826
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
ao4826: specified limits as data (metadata.characteristics, 29 rows from the datasheet)
2 files changed
+392−1
README.md+36@@ -26,6 +26,42 @@ AO4826 from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manu | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 60 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID | | | 7 | A | TC=25°C | 1 |+| Continuous Drain Current | ID | | | 4 | A | TC=125°C | 1 |+| Continuous Source Current (Diode Conduction) | IS | | | 3.6 | A | | 1 |+| Pulsed Drain Current | IDM | | | 28 | A | | 1 |+| Single Pulse Avalanche Current | IAS | | | 18 | A | L=0.1mH | 1 |+| Single Pulse Avalanche Energy | EAS | | | 16.2 | mJ | L=0.1mH | 1 |+| Maximum Power Dissipation | PD | | | 4 | W | TC=25°C | 1 |+| Maximum Power Dissipation | PD | | | 1.3 | W | TC=125°C | 1 |+| Storage Temperature / Operating Junction Temperature | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Junction-to-Ambient Thermal Resistance | RthJA | | | 110 | °C/W | PCB Mount (1in square FR4 PCB) | 2 |+| Junction-to-Foot (Drain) Thermal Resistance | RthJF | | | 34 | °C/W | | 2 |+| Drain-Source Breakdown Voltage | VDS | 60 | | | V | VGS=0V, ID=250µA | 3 |+| Gate-Source Threshold Voltage | VGS(th) | 1 | | | V | VDS=VGS, ID=250µA | 3 |+| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 3 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VGS=0V, VDS=60V | 3 |+| Zero Gate Voltage Drain Current | IDSS | | | 5 | µA | VGS=0V, VDS=60V, TJ=55°C | 3 |+| On-State Drain Current | ID(ON) | 20 | | | A | VGS=10V, VDS≥5V | 3 |+| Drain-Source On-State Resistance | RDS(ON) | | | 28 | mΩ | VGS=10V, ID=4.5A | 3 |+| Drain-Source On-State Resistance | RDS(ON) | | | 30 | mΩ | VGS=4.5V, ID=4A | 3 |+| Input Capacitance | Ciss | | 600 | 750 | pF | VDS=25V, VGS=0V, f=1MHz | 3 |+| Output Capacitance | Coss | | 110 | 140 | pF | VDS=25V, VGS=0V, f=1MHz | 3 |+| Reverse Transfer Capacitance | Crss | | 50 | 62 | pF | VDS=25V, VGS=0V, f=1MHz | 3 |+| Total Gate Charge | Qg | | 11.7 | 18 | nC | VDS=30V, VGS=10V, ID=5.3A | 3 |+| Gate-Source Charge | Qgs | | 1.8 | 2.7 | nC | VDS=30V, VGS=10V, ID=5.3A | 3 |+| Gate-Drain Charge | Qgd | | 2.8 | 4.2 | nC | VDS=30V, VGS=10V, ID=5.3A | 3 |+| Pulsed Current (Source-Drain Diode) | ISM | | | 28 | A | | 3 |+| Forward Voltage | VSD | | 0.75 | 1.1 | V | IF=2A, VGS=0V | 3 |+ ## CAD (KiCad official) - Symbol: `AO4826`
page.json+356−1@@ -179,6 +179,361 @@ "Package": "SOP-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "fb2462a388929057",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 7,+ "conditions": "TC=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "TC=125°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source Current (Diode Conduction)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3.6,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 28,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 18,+ "conditions": "L=0.1mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 16.2,+ "conditions": "L=0.1mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "TC=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "TC=125°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature / Operating Junction Temperature",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 110,+ "conditions": "PCB Mount (1in square FR4 PCB)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Foot (Drain) Thermal Resistance",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 34,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": null,+ "max": null,+ "conditions": "VDS=VGS, ID=250µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS=0V, VGS=±20V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS=0V, VDS=60V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VGS=0V, VDS=60V, TJ=55°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current",+ "symbol": "ID(ON)",+ "kind": "electrical",+ "unit": "A",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "VGS=10V, VDS≥5V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 28,+ "conditions": "VGS=10V, ID=4.5A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "VGS=4.5V, ID=4A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 600,+ "max": 750,+ "conditions": "VDS=25V, VGS=0V, f=1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 110,+ "max": 140,+ "conditions": "VDS=25V, VGS=0V, f=1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 50,+ "max": 62,+ "conditions": "VDS=25V, VGS=0V, f=1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 11.7,+ "max": 18,+ "conditions": "VDS=30V, VGS=10V, ID=5.3A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 1.8,+ "max": 2.7,+ "conditions": "VDS=30V, VGS=10V, ID=5.3A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.8,+ "max": 4.2,+ "conditions": "VDS=30V, VGS=10V, ID=5.3A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Current (Source-Drain Diode)",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 28,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.75,+ "max": 1.1,+ "conditions": "IF=2A, VGS=0V",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -220,4 +575,4 @@ "visibility": { "public": true }-}+}