component
AO4822
Public Made by Adomby adom
JSMSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
AO4822
JSMSEMI · MOSFETs · SOP-8
AO4822 from JSMSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the first N-channel MOSFET; the device is rated 30V VDSS and ±20V VGSS, with 8A continuous drain current at TA=25°C (VGS=10V). |
| 2 | G1 | input | Gate of the first N-channel MOSFET; gate-source voltage is rated ±20V (VGSS). |
| 3 | S2 | passive | Source of the second N-channel MOSFET; the device is rated 30V VDSS and ±20V VGSS, with 8A continuous drain current at TA=25°C (VGS=10V). |
| 4 | G2 | input | Gate of the second N-channel MOSFET; gate-source voltage is rated ±20V (VGSS). |
| 5 | D1 | passive | Drain of the first N-channel MOSFET; drain-source voltage is rated 30V (VDSS). |
| 6 | D1 | passive | Drain of the first N-channel MOSFET (second drain pin, tied to the same drain); drain-source voltage is rated 30V (VDSS). |
| 7 | D2 | passive | Drain of the second N-channel MOSFET; drain-source voltage is rated 30V (VDSS). |
| 8 | D2 | passive | Drain of the second N-channel MOSFET (second drain pin, tied to the same drain); drain-source voltage is rated 30V (VDSS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, IDS=250mA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 1.9 | V | VDS=VGS, IDS=250mA | 2 |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | mA | VDS=24V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 30 | mA | TJ=85°C | 2 | ||
| Drain-Source On-state Resistance | RDS(ON) | 17.5 | 27 | mW | VGS=10V, IDS=8A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 23 | 30 | mW | VGS=4.5V, IDS=7A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 35 | 45 | mW | VGS=2.5V, IDS=7A | 2 | |
| Diode Forward Voltage | VSD | 0.7 | 1.1 | V | ISD=1A, VGS=0V | 2 | |
| Gate Resistance | RG | 1.3 | 1.7 | 2.3 | W | VGS=0V, VDS=0V, F=1MHz | 3 |
| Turn-on Delay Time | td(ON) | 5.9 | 10 | ns | VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W | 3 | |
| Turn-on Rise Time | tr | 10 | 17 | ns | VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W | 3 | |
| Turn-off Delay Time | td(OFF) | 17 | 35 | ns | VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W | 3 | |
| Turn-off Fall Time | tf | 4 | 9 | ns | VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W | 3 | |
| Total Gate Charge | Qg | 10.2 | 14 | nC | VDS=15V, VGS=10V, IDS=8A | 3 | |
| Drain-Source Voltage | VDSS | 30 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 8 | A | TA=25°C, VGS=10V | 2 | ||
| Continuous Drain Current | ID | 6.5 | A | TA=70°C, VGS=10V | 2 | ||
| 300ms Pulsed Drain Current | IDM | 40 | A | 300ms pulse, VGS=10V | 2 | ||
| Diode Continuous Forward Current | IS | 1 | A | 2 | |||
| Avalanche Current (Single Pulse) | IAS | 9 | A | 2 | |||
| Avalanche Energy, Single Pulse | EAS | 20 | mJ | L=0.5mH | 2 | ||
| Maximum Junction Temperature | TJ | 150 | °C | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Maximum Power Dissipation | PD | 1.7 | W | TA=25°C | 2 | ||
| Maximum Power Dissipation | PD | 1.08 | W | TA=70°C | 2 | ||
| Thermal Resistance-Junction to Ambient | RqJA | 48 | °C/W | t≤10s | 2 | ||
| Thermal Resistance-Junction to Ambient | RqJA | 74 | °C/W | Steady State | 2 | ||
| Thermal Resistance-Junction to Lead | RqJL | 32 | °C/W | Steady State | 2 |
CAD (KiCad official)
- Symbol:
AO4822 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4822-etched.step/ao4822-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4822.step/ao4822.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (11 pp, sha256
6db34609be6bcb09, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AO4822
**JSMSEMI** · MOSFETs · SOP-8
AO4822 from JSMSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the first N-channel MOSFET; the device is rated 30V VDSS and ±20V VGSS, with 8A continuous drain current at TA=25°C (VGS=10V). |
| 2 | G1 | input | Gate of the first N-channel MOSFET; gate-source voltage is rated ±20V (VGSS). |
| 3 | S2 | passive | Source of the second N-channel MOSFET; the device is rated 30V VDSS and ±20V VGSS, with 8A continuous drain current at TA=25°C (VGS=10V). |
| 4 | G2 | input | Gate of the second N-channel MOSFET; gate-source voltage is rated ±20V (VGSS). |
| 5 | D1 | passive | Drain of the first N-channel MOSFET; drain-source voltage is rated 30V (VDSS). |
| 6 | D1 | passive | Drain of the first N-channel MOSFET (second drain pin, tied to the same drain); drain-source voltage is rated 30V (VDSS). |
| 7 | D2 | passive | Drain of the second N-channel MOSFET; drain-source voltage is rated 30V (VDSS). |
| 8 | D2 | passive | Drain of the second N-channel MOSFET (second drain pin, tied to the same drain); drain-source voltage is rated 30V (VDSS). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V, IDS=250mA | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 1.9 | V | VDS=VGS, IDS=250mA | 2 |
| Gate Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | mA | VDS=24V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 30 | mA | TJ=85°C | 2 |
| Drain-Source On-state Resistance | RDS(ON) | | 17.5 | 27 | mW | VGS=10V, IDS=8A | 2 |
| Drain-Source On-state Resistance | RDS(ON) | | 23 | 30 | mW | VGS=4.5V, IDS=7A | 2 |
| Drain-Source On-state Resistance | RDS(ON) | | 35 | 45 | mW | VGS=2.5V, IDS=7A | 2 |
| Diode Forward Voltage | VSD | | 0.7 | 1.1 | V | ISD=1A, VGS=0V | 2 |
| Gate Resistance | RG | 1.3 | 1.7 | 2.3 | W | VGS=0V, VDS=0V, F=1MHz | 3 |
| Turn-on Delay Time | td(ON) | | 5.9 | 10 | ns | VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W | 3 |
| Turn-on Rise Time | tr | | 10 | 17 | ns | VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W | 3 |
| Turn-off Delay Time | td(OFF) | | 17 | 35 | ns | VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W | 3 |
| Turn-off Fall Time | tf | | 4 | 9 | ns | VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W | 3 |
| Total Gate Charge | Qg | | 10.2 | 14 | nC | VDS=15V, VGS=10V, IDS=8A | 3 |
| Drain-Source Voltage | VDSS | | | 30 | V | | 2 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 2 |
| Continuous Drain Current | ID | | | 8 | A | TA=25°C, VGS=10V | 2 |
| Continuous Drain Current | ID | | | 6.5 | A | TA=70°C, VGS=10V | 2 |
| 300ms Pulsed Drain Current | IDM | | | 40 | A | 300ms pulse, VGS=10V | 2 |
| Diode Continuous Forward Current | IS | | | 1 | A | | 2 |
| Avalanche Current (Single Pulse) | IAS | | | 9 | A | | 2 |
| Avalanche Energy, Single Pulse | EAS | | | 20 | mJ | L=0.5mH | 2 |
| Maximum Junction Temperature | TJ | | | 150 | °C | | 2 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 2 |
| Maximum Power Dissipation | PD | | | 1.7 | W | TA=25°C | 2 |
| Maximum Power Dissipation | PD | | | 1.08 | W | TA=70°C | 2 |
| Thermal Resistance-Junction to Ambient | RqJA | | | 48 | °C/W | t≤10s | 2 |
| Thermal Resistance-Junction to Ambient | RqJA | | | 74 | °C/W | Steady State | 2 |
| Thermal Resistance-Junction to Lead | RqJL | | | 32 | °C/W | Steady State | 2 |
## CAD (KiCad official)
- Symbol: `AO4822`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `ao4822-etched.step` / `ao4822-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao4822.step` / `ao4822.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [JSMSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590458046892564480) (11 pp, sha256 `6db34609be6bcb09`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ao4822-datasheet.pdf)