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Ray Publish 0.1.0 d4a2f0e 2d ago

AO4818-JSM

JSMSEMI · MOSFETs · SOP-8

AO4818-JSM from JSMSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel, 30V VDSS, 8A continuous drain current rating).
2 G1 input Gate of MOSFET 1; gate-source voltage limited to ±20V.
3 S2 passive Source of MOSFET 2 (N-channel, 30V VDSS, 8A continuous drain current rating).
4 G2 input Gate of MOSFET 2; gate-source voltage limited to ±20V.
5 D2 passive Drain of MOSFET 2, internally tied to pin 6; 30V maximum drain-source voltage.
6 D2 passive Drain of MOSFET 2, internally tied to pin 5; 30V maximum drain-source voltage.
7 D1 passive Drain of MOSFET 1, internally tied to pin 8; 30V maximum drain-source voltage.
8 D1 passive Drain of MOSFET 1, internally tied to pin 7; 30V maximum drain-source voltage.

Key specifications

Parameter Value
Manufacturer JSMSEMI
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 30 V 1
Gate-Source Voltage VGSS -20 20 V 1
Continuous Drain Current ID 8 A TA=25°C, VGS=10V 1
Continuous Drain Current ID 6.5 A TA=70°C, VGS=10V 1
Pulsed Drain Current IDM 40 A 300ms pulse, VGS=10V 1
Diode Continuous Forward Current IS 1 A 1
Avalanche Current (Single Pulse) IAS 9 A 1
Avalanche Energy, Single Pulse EAS 20 mJ L=0.5mH 1
Maximum Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Maximum Power Dissipation PD 1.7 W TA=25°C 1
Maximum Power Dissipation PD 1.08 W TA=70°C 1
Thermal Resistance-Junction to Ambient RθJA 48 °C/W t≤10s 1
Thermal Resistance-Junction to Ambient RθJA 74 °C/W Steady State 1
Thermal Resistance-Junction to Lead RθJL 3 °C/W Steady State 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, IDS=250mA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=24V, VGS=0V 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0 2
Gate Threshold Voltage VGS(th) 1 1.9 V VDS=VGS, IDS=250mA 2
Drain-Source On-state Resistance RDS(ON) 17 mW VGS=10V, IDS=8A 1
Drain-Source On-state Resistance RDS(ON) 24 mW VGS=4.5V, IDS=7A 1
Diode Forward Voltage VSD 0.7 1.1 V ISD=1A, VGS=0V 2
Reverse Recovery Time trr 15.5 ns ISD=8A, dISD/dt=100A/ms 2
Reverse Recovery Charge Qrr 6.5 nC ISD=8A, dISD/dt=100A/ms 2

CAD (KiCad official)

  • Symbol: AO4818-JSM
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ao4818-jsm-etched.step / ao4818-jsm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4818-jsm.step / ao4818-jsm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JSMSEMI datasheet (8 pp, sha256 f73d37fc7de90fe2, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF