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AO4818-HXY

HXY MOSFET · MOSFETs · SOP-8

AO4818-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of N-channel MOSFET 1, part of the 30 V VDS rated channel.
2 G1 input Gate of N-channel MOSFET 1; gate-source voltage is rated ±20 V and threshold VGS(th) is 1.2 V to 2.5 V.
3 S2 passive Source terminal of N-channel MOSFET 2, part of the 30 V VDS rated channel.
4 G2 input Gate of N-channel MOSFET 2; gate-source voltage is rated ±20 V and threshold VGS(th) is 1.2 V to 2.5 V.
5 D2 passive Drain of N-channel MOSFET 2, rated for 30 V VDS and 8.5 A continuous drain current at TA=25℃.
6 D2 passive Drain of N-channel MOSFET 2, rated for 30 V VDS and 8.5 A continuous drain current at TA=25℃.
7 D1 passive Drain of N-channel MOSFET 1, rated for 30 V VDS and 8.5 A continuous drain current at TA=25℃.
8 D1 passive Drain of N-channel MOSFET 1, rated for 30 V VDS and 8.5 A continuous drain current at TA=25℃.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current ID 8.5 A ID@TA=25℃, VGS @ 4.5V 1
Drain Current ID 5.8 A ID@TA=70℃, VGS @ 4.5V 1
Pulsed Drain Current IDM 37 A 1
Total Power Dissipation PD 1.5 W PD@TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 85 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Gate Threshold Voltage VGS(th) 1.2 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 7.3 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 37 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
BVDSS Temperature Coefficient △BVDSS/△TJ 0.034 V/℃ Reference to 25℃, ID=1mA 2
Static Drain-Source On-Resistance RDS(ON) 18 mΩ VGS=10V, ID=7A 2
Static Drain-Source On-Resistance RDS(ON) 28 mΩ VGS=4.5V, ID=4A 2
VGS(th) Temperature Coefficient △VGS(th) -5.8 mV/℃ 2
Forward Transconductance gfs 6 S VDS=5V, ID=7A 2
Gate Resistance Rg 2.5 VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (4.5V) Qg 6 nC VDS=15V, VGS=4.5V, ID=7A 2
Gate-Source Charge Qgs 2.5 nC 2
Gate-Drain Charge Qgd 2.1 nC 2
Turn-On Delay Time Td(on) 2.4 ns VDD=15V, VGS=10V, RG=3.3, ID=7A 2
Rise Time Tr 7.8 ns 2
Turn-Off Delay Time Td(off) 22 ns 2
Fall Time Tf 4 ns 2
Input Capacitance Ciss 572 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 80 pF 2
Reverse Transfer Capacitance Crss 65 pF 2
Reverse Recovery Time trr 20 nS IF=7A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 1.1 nC 2

CAD (KiCad official)

  • Symbol: AO4818-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ao4818-hxy-etched.step / ao4818-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4818-hxy.step / ao4818-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 060a3df530e7eb25, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF