AO4813

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  "slug": "ao4813",
  "title": "AO4813",
  "brief": "JSMSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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  "component": {
    "mpn": "AO4813",
    "manufacturer": "JSMSEMI",
    "package": "SOP-8",
    "pin_count": 8,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/88f8350af264a660e002d6c77d72765a.pdf",
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    "distributor_links": {
      "lcsc": "C20609406"
    },
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      "checked_at": "2026-10-17T20:25:16Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "quota"
      },
      "mouser": {
        "pn": null,
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    },
    "pins": [
      {
        "number": "1",
        "name": "Source 2",
        "type": "passive",
        "description": "Source terminal of P-MOS2, the second P-channel MOSFET in the dual package; the datasheet gives no separate per-pin rating, so the device limits apply (VDS = -30V, VGS = ±20V)."
      },
      {
        "number": "2",
        "name": "Gate 2",
        "type": "input",
        "description": "Gate of P-MOS2 for switching the second P-channel MOSFET; gate-source voltage is limited to ±20V per the absolute maximum ratings."
      },
      {
        "number": "3",
        "name": "Source 1",
        "type": "passive",
        "description": "Source terminal of P-MOS1, the first P-channel MOSFET in the dual package; the datasheet gives no separate per-pin rating, so the device limits apply (VDS = -30V, VGS = ±20V)."
      },
      {
        "number": "4",
        "name": "Gate 1",
        "type": "input",
        "description": "Gate of P-MOS1 for switching the first P-channel MOSFET; gate-source voltage is limited to ±20V per the absolute maximum ratings."
      },
      {
        "number": "5",
        "name": "Drain 1",
        "type": "passive",
        "description": "Drain terminal of P-MOS1, rated for a drain-source voltage of -30V with continuous drain current of -7.5A at TC=25ºC."
      },
      {
        "number": "6",
        "name": "Drain 1",
        "type": "passive",
        "description": "Drain terminal of P-MOS1 (internally paired with pin 5), rated for a drain-source voltage of -30V with continuous drain current of -7.5A at TC=25ºC."
      },
      {
        "number": "7",
        "name": "Drain 2",
        "type": "passive",
        "description": "Drain terminal of P-MOS2, rated for a drain-source voltage of -30V with continuous drain current of -7.5A at TC=25ºC."
      },
      {
        "number": "8",
        "name": "Drain 2",
        "type": "passive",
        "description": "Drain terminal of P-MOS2 (internally paired with pin 7), rated for a drain-source voltage of -30V with continuous drain current of -7.5A at TC=25ºC."
      }
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  "metadata": {
    "specs": {
      "Manufacturer": "JSMSEMI",
      "Package": "SOP-8",
      "Category": "Transistors/Thyristors",
      "Pins": "8"
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    "characteristics": {
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          "name": "Forward Transconductance",
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          "name": "Diode Forward Voltage",
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          "min": null,
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          "max": -1,
          "conditions": "VGS=0V, IS=-1.0A, TJ=25℃",
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        {
          "name": "Input Capacitance",
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          "name": "Turn-On Delay Time",
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          "name": "Rise Time",
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          "name": "Fall Time",
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          "name": "Gate-Source Voltage",
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          "name": "Drain Current (continuous)",
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        {
          "name": "Power Dissipation",
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          "name": "Storage Temperature Range",
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          "name": "Operating Junction Temperature Range",
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