# AO4813

**JSMSEMI** · MOSFETs · SOP-8

AO4813 from JSMSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source 2 | passive | Source terminal of P-MOS2, the second P-channel MOSFET in the dual package; the datasheet gives no separate per-pin rating, so the device limits apply (VDS = -30V, VGS = ±20V). |
| 2 | Gate 2 | input | Gate of P-MOS2 for switching the second P-channel MOSFET; gate-source voltage is limited to ±20V per the absolute maximum ratings. |
| 3 | Source 1 | passive | Source terminal of P-MOS1, the first P-channel MOSFET in the dual package; the datasheet gives no separate per-pin rating, so the device limits apply (VDS = -30V, VGS = ±20V). |
| 4 | Gate 1 | input | Gate of P-MOS1 for switching the first P-channel MOSFET; gate-source voltage is limited to ±20V per the absolute maximum ratings. |
| 5 | Drain 1 | passive | Drain terminal of P-MOS1, rated for a drain-source voltage of -30V with continuous drain current of -7.5A at TC=25ºC. |
| 6 | Drain 1 | passive | Drain terminal of P-MOS1 (internally paired with pin 5), rated for a drain-source voltage of -30V with continuous drain current of -7.5A at TC=25ºC. |
| 7 | Drain 2 | passive | Drain terminal of P-MOS2, rated for a drain-source voltage of -30V with continuous drain current of -7.5A at TC=25ºC. |
| 8 | Drain 2 | passive | Drain terminal of P-MOS2 (internally paired with pin 7), rated for a drain-source voltage of -30V with continuous drain current of -7.5A at TC=25ºC. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | VGS=0V, ID=-250µA | 1 |
| Zero Gate Voltage Drain Current (TJ=25°C) | IDSS |  |  | -1 | µA | TJ=25°C; VDS=-30V, VGS=0V | 1 |
| Zero Gate Voltage Drain Current (TJ=125°C) | IDSS |  |  | -10 | µA | TJ=125°C; VDS=-24V, VGS=0V | 1 |
| Gate-Body Leakage | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 1 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS=VGS, ID=-250µA | 1 |
| Drain-Source On-State Resistance | RDS(on) |  | 17 | 24 | mΩ | VGS=-10V, ID=-7.5A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 26 | 40 | mΩ | VGS=-4.5V, ID=-5.0A | 2 |
| Forward Transconductance | gfs |  | 6.8 |  | S | VDS=-10V, ID=-3A | 2 |
| Continuous Source Current | IS |  |  | -7.5 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM |  |  | -30 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | -1 | V | VGS=0V, IS=-1.0A, TJ=25℃ | 2 |
| Input Capacitance | Ciss |  | 1250 | 1820 | pF | VDS=-15V, VGS=0V, F=1MHz | 2 |
| Output Capacitance | Coss |  | 160 | 235 | pF | VDS=-15V, VGS=0V, F=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 90 | 130 | pF | VDS=-15V, VGS=0V, F=1MHz | 2 |
| Total Gate Charge | Qg |  | 11 | 17 | nC | VDS=-15V, VGS=-4.5V, ID=-5A | 2 |
| Gate-Source Charge | Qgs |  | 3.4 | 6 | nC | VDS=-15V, VGS=-4.5V, ID=-5A | 2 |
| Gate-Drain Charge | Qgd |  | 4.2 | 8 | nC | VDS=-15V, VGS=-4.5V, ID=-5A | 2 |
| Turn-On Delay Time | Td(on) |  | 5.8 | 11 | ns | VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A | 2 |
| Rise Time | Tr |  | 18.8 | 36 | ns | VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A | 2 |
| Turn-Off Delay Time | Td(off) |  | 46.9 | 89 | ns | VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A | 2 |
| Fall Time | Tf |  | 12.3 | 23 | ns | VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A | 2 |
| Drain-Source Voltage | VDS |  |  | -30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current (continuous) | ID |  |  | -7.5 | A | TC=25ºC | 1 |
| Drain Current (continuous) | ID |  |  | -4.13 | A | TC=70ºC | 1 |
| Drain Current, Pulsed | IDM |  |  | -30 | A |  | 1 |
| Power Dissipation | PD |  |  | 2.1 | W | TC=25ºC | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ºC |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ºC |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 62.5 | ºC/W |  | 1 |

## CAD (KiCad official)

- Symbol: `AO4813`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `ao4813-etched.step` / `ao4813-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao4813.step` / `ao4813.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [JSMSEMI datasheet](docs/ao4813-datasheet.pdf) (4 pp, sha256 `73d0fe2602431181`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ao4813-datasheet.pdf)