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AO4812-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO4812-HXY
HXY MOSFET · MOSFETs · SOP-8
AO4812-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N-channel MOSFET 1 (VDS max 30 V, ID 6 A at TA=25°C). |
| 2 | G1 | input | Gate of N-channel MOSFET 1 (VGS max ±20 V, VGS(th) 1.2 to 2.4 V at ID=250µA). |
| 3 | S2 | passive | Source of N-channel MOSFET 2 (VDS max 30 V, ID 6 A at TA=25°C). |
| 4 | G2 | input | Gate of N-channel MOSFET 2 (VGS max ±20 V, VGS(th) 1.2 to 2.4 V at ID=250µA). |
| 5 | D2 | passive | Drain of N-channel MOSFET 2, internally common with pin 6 (VDS max 30 V, pulsed IDM 30 A). |
| 6 | D2 | passive | Drain of N-channel MOSFET 2, internally common with pin 5 (VDS max 30 V, pulsed IDM 30 A). |
| 7 | D1 | passive | Drain of N-channel MOSFET 1, internally common with pin 8 (VDS max 30 V, pulsed IDM 30 A). |
| 8 | D1 | passive | Drain of N-channel MOSFET 1, internally common with pin 7 (VDS max 30 V, pulsed IDM 30 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | Tj=25°C | 1 | ||
| Gate-Source Voltage | VGS | 20 | V | printed as +20 | 1 | ||
| Drain Current | ID | 6 | A | TA=25℃, VGS @ 4.5V | 1 | ||
| Drain Current | ID | 5 | A | TA=70℃, VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 30 | A | 1 | |||
| Total Power Dissipation | PD | 2 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 62.5 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=-250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | VDS=30V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.4 | V | VDS=VGS ID=250µA | 2 |
| On state drain current | ID(ON) | 30 | A | VGS=10V, VDS=5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 25 | 30 | mΩ | VGS=10V, ID=6A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 40 | 48 | mΩ | VGS=10V, ID=6A, TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 33 | 42 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Forward Transconductance | gFS | 15 | S | VDS=5V, ID=6A | 2 | ||
| Diode Forward Voltage | VSD | 0.76 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 2.5 | A | 2 | |||
| Input Capacitance | Ciss | 255 | 310 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Output Capacitance | Coss | 45 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 35 | 50 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Gate resistance | Rg | 1.6 | 3.25 | 4.9 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg(10V) | 5.2 | 6.3 | nC | VGS=10V, VDS=15V, ID=6A | 2 | |
| Total Gate Charge (4.5V) | Qg(4.5V) | 2.55 | 3.2 | nC | VGS=10V, VDS=15V, ID=6A | 2 | |
| Gate Source Charge | Qgs | 0.85 | nC | VGS=10V, VDS=15V, ID=6A | 2 | ||
| Gate Drain Charge | Qgd | 1.3 | nC | VGS=10V, VDS=15V, ID=6A | 2 | ||
| Turn-On DelayTime | tD(on) | 4.5 | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 2.5 | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 2 | ||
| Turn-Off DelayTime | tD(off) | 14.5 | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 3.5 | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 8.5 | ns | IF=6A, dI/dt=100A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 2.2 | nC | IF=6A, dI/dt=100A/µs | 2 | ||
| Thermal Resistance Junction-Ambient (Figure 12) | RθJA | 90 | °C/W | Figure 12 transient thermal impedance curve | 4 |
CAD (KiCad official)
- Symbol:
AO4812-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4812-hxy-etched.step/ao4812-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4812-hxy.step/ao4812-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
a61c615ce7e66ec9, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).