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AO4805-HXY

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HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AO4805-HXY

HXY MOSFET · MOSFETs · SOP-8

AO4805-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of channel 1 of the dual P-channel MOSFET; the datasheet gives no pin-specific limit, and the device ratings apply (VDS -30 V, VGS ±20 V, ID -8.5 A continuous).
2 G1 input Gate of channel 1; VGS is rated ±20 V (absolute maximum) and the threshold is -1.0 V to -2.5 V at ID = -250 µA.
3 S2 passive Source of channel 2 of the dual P-channel MOSFET; the datasheet gives no pin-specific limit, and the device ratings apply (VDS -30 V, VGS ±20 V, ID -8.5 A continuous).
4 G2 input Gate of channel 2; VGS is rated ±20 V (absolute maximum) and the threshold is -1.0 V to -2.5 V at ID = -250 µA.
5 D2 passive Drain of channel 2 of the dual P-channel MOSFET; the datasheet gives no pin-specific limit, and the device ratings apply (VDS -30 V, ID -8.5 A continuous, IDM -26 A pulsed).
6 D2 passive Drain of channel 2 (tied to pin 5 in the package); the datasheet gives no pin-specific limit, and the device ratings apply (VDS -30 V, ID -8.5 A continuous, IDM -26 A pulsed).
7 D1 passive Drain of channel 1 (tied to pin 8 in the package); the datasheet gives no pin-specific limit, and the device ratings apply (VDS -30 V, ID -8.5 A continuous, IDM -26 A pulsed).
8 D1 passive Drain of channel 1 of the dual P-channel MOSFET; the datasheet gives no pin-specific limit, and the device ratings apply (VDS -30 V, ID -8.5 A continuous, IDM -26 A pulsed).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID -8.5 A 1
Drain Current-Pulsed IDM -26 A Note 1 1
Maximum Power Dissipation PD 1.5 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 85 ℃/W Note 2 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Gate Threshold Voltage VGS(th) -1 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current (TJ=25℃) IDSS -1 uA VDS=-24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current (TJ=55℃) IDSS -5 uA VDS=-24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -6.5 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -26 A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AO4805-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ao4805-hxy-etched.step / ao4805-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4805-hxy.step / ao4805-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 f677909245d25a2a, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF