component
AO4803A
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| ao4803a-etched.glb | 16d ago |
| ao4803a-etched.step | 16d ago |
| ao4803a-hero.glb | 16d ago |
| ao4803a-hero.overlay.json | 16d ago |
| ao4803a.glb | 16d ago |
| ao4803a.kicad_mod | 16d ago |
| ao4803a.kicad_sym | 16d ago |
| ao4803a.lbr | 16d ago |
| ao4803a.step | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
AO4803A
Alpha Omega Semicon · MOSFETs · SOIC-8
AO4803A from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the first P-channel MOSFET; device rated VDS = -30V and VGS = ±20V. |
| 2 | G1 | input | Gate terminal of the first P-channel MOSFET; VGS is limited to ±20V. |
| 3 | S2 | passive | Source terminal of the second P-channel MOSFET; device rated VDS = -30V and VGS = ±20V. |
| 4 | G2 | input | Gate terminal of the second P-channel MOSFET; VGS is limited to ±20V. |
| 5 | D2 | passive | Drain terminal of the second P-channel MOSFET; continuous drain current ID is -5A at TA=25°C. |
| 6 | D2 | passive | Drain terminal of the second P-channel MOSFET (internally common with pin 5); continuous drain current ID is -5A at TA=25°C. |
| 7 | D1 | passive | Drain terminal of the first P-channel MOSFET (internally common with pin 8); continuous drain current ID is -5A at TA=25°C. |
| 8 | D1 | passive | Drain terminal of the first P-channel MOSFET (internally common with pin 7); continuous drain current ID is -5A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -5 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -4 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -30 | A | 1 | |||
| Avalanche Energy | EAS, EAR | 14 | mJ | L=0.1mH | 1 | ||
| Avalanche Current | IAS, IAR | 17 | A | 1 | |||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Power Dissipation | PD | 2 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 1.3 | W | TA=70°C | 1 | ||
| Maximum Junction-to-Ambian (t≤10s) | RθJA | 48 | 62.5 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambian (steady-state) | RθJA | 74 | 110 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Lead (steady-state) | RθJL | 35 | 40 | °C/W | Steady-State | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | ID=-250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | VDS=-30V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.5 | -2 | -2.5 | V | VDS=VGS, ID=-250µA | 2 |
| On State Drain Current | ID(ON) | -30 | A | VGS=-10V, VDS=-5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 32 | 46 | mΩ | VGS=-10V, ID=-5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 48 | 68 | mΩ | VGS=-10V, ID=-5A, TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 51 | 74 | mΩ | VGS=-4.5V, ID=-4A | 2 | |
| Diode Forward Voltage | VSD | -0.7 | -1 | V | IS=-1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | -2.5 | A | 2 | |||
| Gate Resistance | Rg | 3.5 | 7.5 | 11.5 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg (10V) | 9.2 | 11 | nC | VGS=-10V, VDS=-15V, ID=-5A | 2 | |
| Total Gate Charge (4.5V) | Qg (4.5V) | 4.6 | 6 | nC | 2 |
CAD (KiCad official)
- Symbol:
AO4803A - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
ao4803a-etched.step/ao4803a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4803a.step/ao4803a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256
6401344f9716489b, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).