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AO4803A

Alpha Omega Semicon · MOSFETs · SOIC-8

AO4803A from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of the first P-channel MOSFET; device rated VDS = -30V and VGS = ±20V.
2 G1 input Gate terminal of the first P-channel MOSFET; VGS is limited to ±20V.
3 S2 passive Source terminal of the second P-channel MOSFET; device rated VDS = -30V and VGS = ±20V.
4 G2 input Gate terminal of the second P-channel MOSFET; VGS is limited to ±20V.
5 D2 passive Drain terminal of the second P-channel MOSFET; continuous drain current ID is -5A at TA=25°C.
6 D2 passive Drain terminal of the second P-channel MOSFET (internally common with pin 5); continuous drain current ID is -5A at TA=25°C.
7 D1 passive Drain terminal of the first P-channel MOSFET (internally common with pin 8); continuous drain current ID is -5A at TA=25°C.
8 D1 passive Drain terminal of the first P-channel MOSFET (internally common with pin 7); continuous drain current ID is -5A at TA=25°C.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -5 A TA=25°C 1
Continuous Drain Current ID -4 A TA=70°C 1
Pulsed Drain Current IDM -30 A 1
Avalanche Energy EAS, EAR 14 mJ L=0.1mH 1
Avalanche Current IAS, IAR 17 A 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Power Dissipation PD 2 W TA=25°C 1
Power Dissipation PD 1.3 W TA=70°C 1
Maximum Junction-to-Ambian (t≤10s) RθJA 48 62.5 °C/W t ≤ 10s 1
Maximum Junction-to-Ambian (steady-state) RθJA 74 110 °C/W Steady-State 1
Maximum Junction-to-Lead (steady-state) RθJL 35 40 °C/W Steady-State 1
Drain-Source Breakdown Voltage BVDSS -30 V ID=-250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS=-30V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS -5 µA VDS=-30V, VGS=0V, TJ=55°C 2
Gate-Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) -1.5 -2 -2.5 V VDS=VGS, ID=-250µA 2
On State Drain Current ID(ON) -30 A VGS=-10V, VDS=-5V 2
Static Drain-Source On-Resistance RDS(ON) 32 46 mΩ VGS=-10V, ID=-5A 2
Static Drain-Source On-Resistance RDS(ON) 48 68 mΩ VGS=-10V, ID=-5A, TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 51 74 mΩ VGS=-4.5V, ID=-4A 2
Diode Forward Voltage VSD -0.7 -1 V IS=-1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS -2.5 A 2
Gate Resistance Rg 3.5 7.5 11.5 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge (10V) Qg (10V) 9.2 11 nC VGS=-10V, VDS=-15V, ID=-5A 2
Total Gate Charge (4.5V) Qg (4.5V) 4.6 6 nC 2

CAD (KiCad official)

  • Symbol: AO4803A
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ao4803a-etched.step / ao4803a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4803a.step / ao4803a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256 6401344f9716489b, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF