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README.md ao4803-ms: specified limits as data (metadata.characteristics, 27 rows from the datasheet) · Ray 17d ago

AO4803-MS

MSKSEMI · MOSFETs · SOP-8

AO4803-MS from MSKSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (P-channel), rated for VDS of -30V.
2 G1 input Gate of MOSFET 1, with VGS maximum of ±20V.
3 S2 passive Source of MOSFET 2 (P-channel), rated for VDS of -30V.
4 G2 input Gate of MOSFET 2, with VGS maximum of ±20V.
5 D2 passive Drain of MOSFET 2, connected with pin 6, continuous drain current -5A at TA=25°C.
6 D2 passive Drain of MOSFET 2, connected with pin 5, continuous drain current -5A at TA=25°C.
7 D1 passive Drain of MOSFET 1, connected with pin 8, continuous drain current -5A at TA=25°C.
8 D1 passive Drain of MOSFET 1, connected with pin 7, continuous drain current -5A at TA=25°C.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 3
Gate-Source Voltage VGS -20 20 V 3
Continuous Drain Current ID -5 A TA=25°C 3
Continuous Drain Current ID -4.2 A TA=70°C 3
Pulsed Drain Current IDM -30 A 3
Avalanche Current IAS, IAR 17 A 3
Avalanche energy EAS, EAR 14 J L=0.1mH 3
Power Dissipation PD 2 W TA=25°C 3
Power Dissipation PD 1.3 W TA=70°C 3
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 3
Maximum Junction-to-Ambient (t ≤ 10s) RθJA 48 62.5 °C/W t ≤ 10s 3
Maximum Junction-to-Ambient (Steady-State) RθJA 74 110 °C/W Steady-State 3
Maximum Junction-to-Lead (Steady-State) RθJL 35 40 °C/W Steady-State 3
Drain-Source Breakdown Voltage BVDSS -30 V ID=-250 A, VGS=0V 4
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V, VGS=0V 4
Zero Gate Voltage Drain Current IDSS -5 μA VDS=-30V, VGS=0V, TJ=55℃ 4
Gate-Body leakage current IGSS -100 100 A VDS=0V, VGS= ±20V 4
Gate Threshold Voltage VGS(th) -1.4 -1.9 -2.4 V VDS=VGS ID=-250 A 4
On state drain current ID(ON) -30 A VGS=-10V, VDS=-5V 4
Static Drain-Source On-Resistance RDS(ON) 32 52 mΩ VGS=-10V, ID=-5A, TJ=25℃ 4
Static Drain-Source On-Resistance RDS(ON) 48 70 mΩ VGS=-10V, ID=-5A, TJ=125℃ 4
Static Drain-Source On-Resistance RDS(ON) 51 87 mΩ VGS=-4.5V, ID=-4A 4
Forward Transconductance FS 13 S VDS=-5V, ID=-5A 4
Diode Forward Voltage VSD -0.7 -1 V IS=- 1A, VGS=0V 4
Maximum Body-Diode Continuous Current IS -2.5 A 4
Total Gate Charge (10V) Qg(10V) 9.2 11 nC VGS=-10V, VDS=-15V, ID=-5A 4
Total Gate Charge (4.5V) Qg(4.5V) 4.6 6 nC 4

CAD (KiCad official)

  • Symbol: AO4803-MS
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ao4803-ms-etched.step / ao4803-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4803-ms.step / ao4803-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (6 pp, sha256 2cde242cceeece63, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF