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AO4800

Public Made by Adom

by adom

Alpha Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 25d ago
viewers ao4800: viewers · Ray 25d ago
ao4800-etched.glb ao4800: factory component page (tier=lcsc) · Ray 25d ago
ao4800-etched.step ao4800: factory component page (tier=lcsc) · Ray 25d ago
ao4800-hero.glb ao4800: hero GLB from the etched model (keeps the MPN mark) · Ray 25d ago
ao4800-hero.overlay.json Publish 0.1.0 · Ray 25d ago
ao4800.glb Publish 0.1.0 · Ray 25d ago
ao4800.kicad_mod Publish 0.1.0 · Ray 25d ago
ao4800.kicad_sym Publish 0.1.0 · Ray 25d ago
ao4800.lbr Publish 0.1.0 · Ray 25d ago
ao4800.step Publish 0.1.0 · Ray 25d ago
package.json Publish 0.1.0 · Ray 25d ago
page.json ao4800: specified limits as data (metadata.characteristics, 33 rows from the datasheet) · Ray 20d ago
README.md ao4800: specified limits as data (metadata.characteristics, 33 rows from the datasheet) · Ray 20d ago

AO4800

Alpha Omega Semicon · MOSFETs · SOIC-8

AO4800 from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (Q1); the body-diode maximum continuous current is 3 A per the electrical characteristics.
2 G1 input Gate of MOSFET 1 (Q1); gate-source voltage is rated ±12 V (absolute maximum).
3 S2 passive Source of MOSFET 2 (Q2); the body-diode maximum continuous current is 3 A per the electrical characteristics.
4 G2 input Gate of MOSFET 2 (Q2); gate-source voltage is rated ±12 V (absolute maximum).
5 D2 passive Drain of MOSFET 2 (Q2); drain-source voltage is rated 30 V (absolute maximum).
6 D2 passive Drain of MOSFET 2 (Q2); drain-source voltage is rated 30 V (absolute maximum).
7 D1 passive Drain of MOSFET 1 (Q1); drain-source voltage is rated 30 V (absolute maximum).
8 D1 passive Drain of MOSFET 1 (Q1); drain-source voltage is rated 30 V (absolute maximum).

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V ID=250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 0.002 1 µA VDS=24V, VGS=0V 2
Zero Gate Voltage Drain Current (TJ=55°C) IDSS 5 µA VDS=24V, VGS=0V, TJ=55°C 2
Gate-Body Leakage Current IGSS 100 nA VDS=0V, VGS=±12V 2
Gate Threshold Voltage VGS(th) 0.7 1 1.4 V VDS=VGS, ID=250µA 2
On State Drain Current ID(ON) 25 A VGS=4.5V, VDS=5V 2
Static Drain-Source On-Resistance RDS(ON) 22.6 27 mΩ VGS=10V, ID=6.9A 2
Static Drain-Source On-Resistance (TJ=125°C) RDS(ON) 33 40 mΩ TJ=125°C, VGS=10V, ID=6.9A 2
Static Drain-Source On-Resistance RDS(ON) 27 32 mΩ VGS=4.5V, ID=6.0A 2
Static Drain-Source On-Resistance RDS(ON) 42 50 mΩ VGS=2.5V, ID=5A 2
Forward Transconductance gFS 12 16 S VDS=5V, ID=5A 2
Diode Forward Voltage VSD 0.71 1 V IS=1A 2
Maximum Body-Diode Continuous Current IS 3 A 2
Input Capacitance Ciss 858 1050 pF VGS=0V, VDS=15V, f=1MHz 2
Gate Resistance Rg 1.24 3.6 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge Qg 9.6 12 nC VGS=4.5V, VDS=15V, ID=6.9A 2
Turn-On Delay Time tD(on) 3.2 4.8 ns VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω 2
Turn-On Rise Time tr 4.1 6.2 ns VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω 2
Turn-Off Delay Time tD(off) 26.3 40 ns VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω 2
Turn-Off Fall Time tf 3.7 5.5 ns VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω 2
Body Diode Reverse Recovery Time trr 15.5 20 ns IF=5A, dI/dt=100A/µs 2
Body Diode Reverse Recovery Charge Qrr 7.9 12 nC IF=5A, dI/dt=100A/µs 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 6.9 A TA=25°C 1
Continuous Drain Current ID 5.8 A TA=70°C 1
Pulsed Drain Current IDM 40 A 1
Power Dissipation PD 2 W TA=25°C 1
Power Dissipation PD 1.44 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient, t ≤ 10s RθJA 48 62.5 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient, Steady-State RθJA 74 110 °C/W Steady-State 1
Maximum Junction-to-Lead, Steady-State RθJL 35 40 °C/W Steady-State 1

CAD (KiCad official)

  • Symbol: AO4800
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ao4800-etched.step / ao4800-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4800.step / ao4800.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (4 pp, sha256 f020e6ae54c44a4d, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF