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AO4627-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AO4627-VB

VBsemi Elec · MOSFETs · SO-8

AO4627-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (30 V VDS, 8 A package-limited ID).
2 G1 input Gate of the N-channel MOSFET, rated for ±20 V VGS maximum.
3 S2 passive Source of the P-channel MOSFET (-30 V VDS, -8 A package-limited ID).
4 G2 input Gate of the P-channel MOSFET, rated for ±20 V VGS maximum.
5 D2 passive Drain of the P-channel MOSFET, tied internally to pin 6 (-30 V VDS, 40 A pulsed IDM).
6 D2 passive Drain of the P-channel MOSFET, tied internally to pin 5 (-30 V VDS, 40 A pulsed IDM).
7 D1 passive Drain of the N-channel MOSFET, tied internally to pin 8 (30 V VDS, 40 A pulsed IDM).
8 D1 passive Drain of the N-channel MOSFET, tied internally to pin 7 (30 V VDS, 40 A pulsed IDM).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage N-Ch VDS 30 V TA = 25 °C 1
Drain-Source Voltage P-Ch VDS -30 V TA = 25 °C 1
Gate-Source Voltage N-Ch VGS -20 20 V TA = 25 °C 1
Gate-Source Voltage P-Ch VGS -20 20 V TA = 25 °C 1
Continuous Drain Current N-Ch ID 8 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current P-Ch ID -8 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current N-Ch ID 6.8 A TC = 70 °C 1
Continuous Drain Current P-Ch ID -6.8 A TC = 70 °C 1
Continuous Drain Current P-Ch ID -6.6 A TA = 25 °C, t = 10 s, 1"x1" FR4 1
Continuous Drain Current N-Ch ID 5.4 A TA = 70 °C, t = 10 s 1
Continuous Drain Current P-Ch ID -5.3 A TA = 70 °C, t = 10 s 1
Pulsed Drain Current N-Ch IDM 40 A 10 µs pulse width 1
Pulsed Drain Current P-Ch IDM -40 A 10 µs pulse width 1
Source-Drain Diode Current N-Ch IS 2.6 A TC = 25 °C 1
Source-Drain Diode Current P-Ch IS -2.6 A TC = 25 °C 1
Pulsed Source-Drain Current N-Ch ISM 40 A 1
Pulsed Source-Drain Current P-Ch ISM -40 A 1
Single Pulse Avalanche Current N-Ch IAS 10 A L = 0.1 mH 1
Single Pulse Avalanche Current P-Ch IAS 20 A L = 0.1 mH 1
Maximum Power Dissipation N-Ch PD 3.1 W TC = 25 °C 1
Maximum Power Dissipation P-Ch PD 3.2 W TC = 25 °C 1
Maximum Power Dissipation PD 2 W TA = 25 °C, t = 10 s, 1"x1" FR4 (both channels) 1
Maximum Power Dissipation PD 1.28 W TA = 70 °C, t = 10 s (both channels) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance N-Ch RthJA 50 62.5 °C/W t ≤ 10 s, surface mounted on 1"x1" FR4 1
Junction-to-Ambient Thermal Resistance P-Ch RthJA 47 62.5 °C/W t ≤ 10 s, surface mounted on 1"x1" FR4 1
Junction-to-Foot (Drain) Thermal Resistance N-Ch RthJF 30 40 °C/W Steady state 1
Junction-to-Foot (Drain) Thermal Resistance P-Ch RthJF 29 38 °C/W Steady state 1
Drain-Source Breakdown Voltage N-Ch VDS 30 V VGS = 0 V, ID = 250 µA 2
Drain-Source Breakdown Voltage P-Ch VDS -30 V VGS = 0 V, ID = - 250 µA 2
Gate Threshold Voltage N-Ch VGS(th) 1 2 V VDS = VGS, ID = 250 µA 2
Gate Threshold Voltage P-Ch VGS(th) -1 -2 V VDS = VGS, ID = - 250 µA 2
Gate-Body Leakage N-Ch IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V 2
Gate-Body Leakage P-Ch IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V 2
Zero Gate Voltage Drain Current N-Ch IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current P-Ch IDSS -1 µA VDS = - 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current N-Ch IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
Zero Gate Voltage Drain Current P-Ch IDSS -10 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current N-Ch ID(on) 20 A VDS = 5 V, VGS = 10 V 2
On-State Drain Current P-Ch ID(on) -20 A VDS = - 5 V, VGS = - 10 V 2
Drain-Source On-State Resistance N-Ch RDS(on) 0.02 Ω VGS = 8 V, ID = 6.7 A 2
Drain-Source On-State Resistance N-Ch RDS(on) 0.024 Ω VGS = 4.5 V, ID = 6.6 A 2
Drain-Source On-State Resistance P-Ch RDS(on) 0.04 Ω VGS = - 10 V, ID = - 8 A 2
Drain-Source On-State Resistance P-Ch RDS(on) 0.044 Ω VGS = - 8 V, ID = - 6.5 A 2
Drain-Source On-State Resistance P-Ch RDS(on) 0.05 Ω VGS = - 4.5 V, ID = - 5 A 2
Body Diode Voltage N-Ch VSD 0.81 1.2 V IS = 5.4 A 3
Body Diode Voltage P-Ch VSD -0.77 -1.2 V IS = - 2 A 3
Forward Transconductance N-Ch gfs 27 S VDS = 15 V, ID = 6.8 A 2
Forward Transconductance P-Ch gfs 25 S VDS = - 15 V, ID = - 6.7 A 2

CAD (KiCad official)

  • Symbol: AO4627-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: ao4627-vb-etched.step / ao4627-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4627-vb.step / ao4627-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 1b130a492a72fc61, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF