# AO4620

**Alpha & Omega Semicon** · MOSFETs · SOIC-8

AO4620 from Alpha & Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of the p-channel MOSFET, rated -30V VDS with VGS of ±20V. |
| 2 | G2 | input | Gate of the p-channel MOSFET, rated VGS ±20V. |
| 3 | S1 | passive | Source of the n-channel MOSFET, rated 30V VDS with VGS of ±20V. |
| 4 | G1 | input | Gate of the n-channel MOSFET, rated VGS ±20V. |
| 5 | D1 | passive | Drain of the n-channel MOSFET, rated 30V VDS and 7.2A continuous ID at TA=25°C. |
| 6 | D1 | passive | Drain of the n-channel MOSFET, rated 30V VDS and 7.2A continuous ID at TA=25°C. |
| 7 | D2 | passive | Drain of the p-channel MOSFET, rated -30V VDS and -5.3A continuous ID at TA=25°C. |
| 8 | D2 | passive | Drain of the p-channel MOSFET, rated -30V VDS and -5.3A continuous ID at TA=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain-Source Voltage (n-channel) | VDS |  |  | 30 | V | n-channel | 1 |
| Drain-Source Voltage (p-channel) | VDS |  |  | -30 | V | p-channel | 1 |
| Continuous Drain Current (n-channel) | ID |  |  | 7.2 | A | TA=25°C, n-channel | 1 |
| Continuous Drain Current (n-channel) | ID |  |  | 6.2 | A | TA=70°C, n-channel | 1 |
| Continuous Drain Current (p-channel) | ID |  |  | -5.3 | A | TA=25°C, p-channel | 1 |
| Continuous Drain Current (p-channel) | ID |  |  | -4.5 | A | TA=70°C, p-channel | 1 |
| Pulsed Drain Current (n-channel) | IDM |  |  | 64 | A | n-channel | 1 |
| Pulsed Drain Current (p-channel) | IDM |  |  | -40 | A | p-channel | 1 |
| Power Dissipation | PD |  |  | 2 | W | TA=25°C | 1 |
| Power Dissipation | PD |  |  | 1.44 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambian t≤10s (n-channel) | RθJA |  | 50 | 62.5 | °C/W | t ≤ 10s, n-ch | 1 |
| Maximum Junction-to-Ambient Steady-State (n-channel) | RθJA |  | 80 | 100 | °C/W | Steady-State, n-ch | 1 |
| Maximum Junction-to-Lead Steady-State (n-channel) | RθJL |  | 32 | 40 | °C/W | Steady-State, n-ch | 1 |
| Maximum Junction-to-Ambient t≤10s (p-channel) | RθJA |  | 50 | 62.5 | °C/W | t ≤ 10s, p-ch | 1 |
| Maximum Junction-to-Ambient Steady-State (p-channel) | RθJA |  | 80 | 100 | °C/W | Steady-State, p-ch | 1 |
| Maximum Junction-to-Lead Steady-State (p-channel) | RθJL |  | 32 | 40 | °C/W | Steady-State, p-ch | 1 |
| Gate Threshold Voltage (n-channel) | VGS(th) | 1.5 | 2.1 | 2.6 | V | VDS=VGS ID=250µA | 2 |
| Static Drain-Source On-Resistance (n-channel) | RDS(ON) |  | 17.7 | 24 | mΩ | VGS=10V, ID=7.2A | 2 |
| Static Drain-Source On-Resistance (n-channel) | RDS(ON) |  | 25 | 32 | mΩ | TJ=125°C | 2 |
| Static Drain-Source On-Resistance (n-channel) | RDS(ON) |  | 24.8 | 36 | mΩ | VGS=4.5V, ID=5A | 2 |
| Input Capacitance (n-channel) | Ciss |  | 373 | 448 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Gate resistance (n-channel) | Rg |  | 1.8 | 2.8 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) (n-channel) | Qg |  | 7.2 | 11 | nC | VGS=10V, VDS=15V, ID=7.2A | 2 |
| Body Diode Reverse Recovery Time (n-channel) | trr |  | 10.5 | 12.6 | ns | IF=7.2A, dI/dt=100A/µs | 2 |
| Diode Forward Voltage (n-channel) | VSD |  | 0.74 | 1 | V | IS=1A, VGS=0V | 2 |
| Gate-Body leakage current (p-channel) | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 5 |
| Gate Threshold Voltage (p-channel) | VGS(th) | -1.3 | -1.85 | -2.4 | V | VDS=VGS ID=-250µA | 5 |
| Static Drain-Source On-Resistance (p-channel) | RDS(ON) |  | 23 | 32 | mΩ | VGS=-10V, ID=-5.3A | 5 |
| Static Drain-Source On-Resistance (p-channel) | RDS(ON) |  | 33 | 55 | mΩ | VGS=-4.5V, ID=-4.5A | 5 |
| Gate resistance (p-channel) | Rg |  | 3.2 | 5 | Ω | VGS=0V, VDS=0V, f=1MHz | 5 |
| Total Gate Charge (10V) (p-channel) | Qg |  | 13.6 | 16 | nC | VGS=-10V, VDS=-15V, ID=-5.3A | 5 |
| Diode Forward Voltage (p-channel) | VSD |  | -0.8 | -1 | V | IS=-1A, VGS=0V | 5 |

## CAD (KiCad official)

- Symbol: `AO4620`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `ao4620-etched.step` / `ao4620-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao4620.step` / `ao4620.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha & Omega Semicon datasheet](docs/ao4620-datasheet.pdf) (7 pp, sha256 `05447450ad726492`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ao4620-datasheet.pdf)