# AO4618-JSM

**JSMSEMI** · MOSFETs · SOP-8

AO4618-JSM from JSMSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (VDS=40V, ID=8A, RDS(ON)<22mΩ at VGS=10V). |
| 2 | G1 | input | Gate of the N-channel MOSFET (VGS max ±20V). |
| 3 | S2 | passive | Source of the P-channel MOSFET (VDS=-40V, ID=-6A, RDS(ON)<53mΩ at VGS=-10V). |
| 4 | G2 | input | Gate of the P-channel MOSFET (VGS max ±20V). |
| 5 | D2 | passive | Drain of the P-channel MOSFET, tied to pin 6 (VDS=-40V, ID=-6A). |
| 6 | D2 | passive | Drain of the P-channel MOSFET, tied to pin 5 (VDS=-40V, ID=-6A). |
| 7 | D1 | passive | Drain of the N-channel MOSFET, tied to pin 8 (VDS=40V, ID=8A). |
| 8 | D1 | passive | Drain of the N-channel MOSFET, tied to pin 7 (VDS=40V, ID=8A). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS |  |  | 40 | V |  | 1 |
| Drain-Source Voltage (P-Channel) | VDS | -40 |  |  | V |  | 1 |
| Gate-Source Voltage (N-Channel) | VGS | -20 |  | 20 | V |  | 1 |
| Gate-Source Voltage (P-Channel) | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current (N-Channel) | ID |  |  | 8 | A | TA=25℃ | 1 |
| Continuous Drain Current (P-Channel) | ID | -6 |  |  | A | TA=25℃ | 1 |
| Continuous Drain Current (N-Channel) | ID |  |  | 5.2 | A | TA=100℃ | 1 |
| Continuous Drain Current (P-Channel) | ID | -3.9 |  |  | A | TA=100℃ | 1 |
| Pulsed Drain Current (N-Channel) | IDM |  |  | 32 | A | note1: pulse width limited by maximum junction temperature | 1 |
| Pulsed Drain Current (P-Channel) | IDM | -24 |  |  | A | note1: pulse width limited by maximum junction temperature | 1 |
| Single Pulsed Avalanche Energy (N-Channel) | EAS |  |  | 13 | mJ | note2: TJ=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω, IAS=7.2A | 1 |
| Single Pulsed Avalanche Energy (P-Channel) | EAS |  |  | 17.6 | mJ | note2: TJ=25℃, VDD=-20V, VG=-10V, L=0.5mH, Rg=25Ω, IAS=-8.4A | 1 |
| Power Dissipation (N-Channel) | PD |  |  | 2 | W | TA=25℃ | 1 |
| Power Dissipation (P-Channel) | PD |  |  | 3.2 | W | TA=25℃ | 1 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction to Ambient (N-Channel) | RθJA |  |  | 62.5 | ℃/W |  | 1 |
| Thermal Resistance, Junction to Ambient (P-Channel) | RθJA |  |  | 39 | ℃/W |  | 1 |
| Source-Drain Diode Forward Voltage (N-Channel) | VSD |  |  | 1.2 | V | VGS=0V,IS=8A | 2 |
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 40 |  |  | V | VGS=0V,ID=250μA | 2 |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS |  |  | 1 | μA | VGS=0V, VDS=40V | 2 |
| Gate-Source Leakage Current (N-Channel) | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0A | 2 |
| Gate-Source Threshold Voltage (N-Channel) | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance (N-Channel) | RDS(ON) |  | 17 | 22 | mΩ | VGS=10V,ID=8A | 2 |
| Drain-Source On Resistance (N-Channel) | RDS(ON) |  | 25 | 35 | mΩ | VGS=4.5V,ID=5A | 2 |
| Continuous Drain to Source Diode Current (N-Channel) | IS |  |  | 8 | A |  | 2 |
| Pulsed Drain to Source Diode Current (N-Channel) | ISM |  |  | 32 | A |  | 2 |
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -40 |  |  | V | VGS=0V,ID=250μA | 5 |
| Zero Gate Voltage Drain Current (P-Channel) | IDSS |  |  | -1 | μA | VGS=0V, VDS=-40V | 5 |
| Gate-Source Leakage Current (P-Channel) | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0A | 5 |
| Gate-Source Threshold Voltage (P-Channel) | VGS(th) | -1 | -1.6 | -2.5 | V | VGS=VDS, ID=250μA | 5 |
| Drain-Source On Resistance (P-Channel) | RDS(ON) |  | 41 | 53 | mΩ | VGS=-10V,ID=-6A | 5 |
| Drain-Source On Resistance (P-Channel) | RDS(ON) |  | 58 | 81 | mΩ | VGS=-4.5V,ID=-4A | 5 |
| Continuous Drain to Source Diode Current (P-Channel) | IS |  |  | -6 | A |  | 5 |
| Pulsed Drain to Source Diode Current (P-Channel) | ISM |  |  | -24 | A |  | 5 |
| Source-Drain Diode Forward Voltage (P-Channel) | VSD |  |  | -1.2 | V | VGS=0V,IS=-6A | 5 |

## CAD (KiCad official)

- Symbol: `AO4618-JSM`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `ao4618-jsm-etched.step` / `ao4618-jsm-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao4618-jsm.step` / `ao4618-jsm.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [JSMSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590910810812739584) (8 pp, sha256 `f1d364e0151048c7`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ao4618-jsm-datasheet.pdf)